BDX47

BDX45 COMSET | Alldatasheet

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Technical content

PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 COMSET SEMICONDUCTORS 1/3 The BDX45, BDX46 and BDX47 are silicon PNP planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary NPN types are the BDX42, BDX43 and BDX44 respectively. SILICON PLANAR DARLINGTON TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX45 60 BDX46 80 - VCBO Collector-Base Voltage BDX47 90 V BDX45 45 BDX46 60 - VCER Collector-EmitterVoltage BDX47 80 V BDX45 BDX46 - VEBO Emitter-Base Voltage BDX47 5 V BDX45 BDX46 - IC BDX47 BDX45 BDX46 - IC Collector Current - ICM BDX47 A BDX45 BDX46 - IB Base Current BDX47 0.1 A BDX45 BDX46 PT Power Dissipation @ T C = 25° BDX47

1.25 Watts

-65 to +150

PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 COMSET SEMICONDUCTORS 2/3 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDX45 BDX46 RthJ-a Thermal Resistance, Junction to Ambient BDX47 100 BDX45 BDX46 RthJ-mb Thermal Resistance, Junction to Mounting base BDX47 K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VBE = 0 ; -VCE = 45V BDX45 - - 10 VBE = 0 ; -VCE = 60V BDX46 - - 10 - ICES Collector cut-off current VBE = 0 ; -VCE = 80V BDX47 - - 10 µA BDX45 - - 10 BDX46 - - 10 - IEBO Emitter cut-off current IC =0 ; VEB = 4V BDX47 - - 10 µA BDX45 - - 1.3 BDX46 - - 1.3 -IC=500 mA, -IB=0.5 mA BDX47 - - 1.3 -IC=1.0 A, -IB=1.0 mA BDX46 - - 1.6 BDX45 - - 1.6 -IC=1.0 A, -IB=4.0 mA BDX47 - - 1.6 BDX45 - - 1.3 BDX46 - - 1.3 -IC=500 mA, -IB=0.5 mA Tj=150 °C BDX47 - - 1.3 -IC=1.0 A, -IB=1.0 mA Tj=150 °C BDX46 - - 1.8 BDX45 - - 1.6 - VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=1.0 A, -IB=4.0 mA Tj=150 °C BDX47 - - 1.6 V BDX45 - - 1.9 BDX46 - - 1.9 -IC=500 mA, -IB=0.5 mA BDX47 - - 1.9 -IC=1.0 A, -IB=1.0 mA BDX46 - - 2.2 BDX45 - - 2.2 - VBE(SAT) Base-Emitter saturation Voltage (*) -IC=1.0 A, -IB=4.0 mA BDX47 - - 2.2 V BDX45 1000 - - BDX46 1000 - - -VCE=10.0 V, -IC=150 mA BDX47 1000 - - BDX45 2000 - - BDX46 2000 - - hFE DC Current Gain -VCE=10.0 V, -IC=500 mA BDX47 2000 - -

PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 COMSET SEMICONDUCTORS 3/3 Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX45 - 10 - BDX46 - 10 - hfe Small Signal Current Gain -VCE=5.0 V, -IC=500 mA , f=35MHz BDX47 - 10 - BDX45 - 400 - BDX46 - 400 - ton Turn-on time BDX47 - 400 - BDX45 - 1500 - BDX46 - 1500 - toff Turn-off time -IC=500 mA, -IBon= IBoff=0.5 mA BDX47 - 1500 - ns BDX45 - 400 - BDX46 - 400 - ton Turn-on time BDX47 - 400 - BDX45 - 1500 - BDX46 - 1500 - toff Turn-off time -IC=1 A, -IBon= IBoff=1.0 mA BDX47 - 1500 - ns MECHANICAL DATA CASE TO-126 DIMENSIONS mm inches min max min max A 7.4 7.8 0.295 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 E 2.2 typ. 0.087 typ. F 0.49 0.75 0.019 0.029 G 4.4 typ. 0.173 typ. H 2.54 typ. 0.100 typ. L 15.7 typ. 0.618 typ. M 1.2 typ. 0.047 typ. N 3.8 typ. 0.149 typ. P 3.0 3.2 0.118 0.126 Pin 1 : Emitter Pin 2 : Collector Case : Base