BDX45_12 COMSET | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

PNP BDX45 – BDX46 – BDX47 24/10/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON PLANAR DARLINGTON TRANSISTORS The BDX45, BDX46 and BDX47 are silicon PNP planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary NPN types are the BDX42, BDX43 and BDX44 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit - VCBO Collector-Base Voltage BDX45 60 V BDX46 80 BDX47 90 - VCER Collector-EmitterVoltage BDX45 45 V BDX46 60 BDX47 80 - VEBO Emitter-Base Voltage 5 V - IC Collector Current - IC 1 A - ICM 2 - IB Base Current 0.1 A PT Power Dissipation @ T C = 25° 1.25 W TJ Junction Temperature 150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to Ambient 100 K/W RthJ-mb Thermal Resistance, Junction to Mounting base 10

PNP BDX45 – BDX46 – BDX47 24/10/2012 COMSET SEMICONDUCTORS 2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit - ICES Collector cut-off current VBE = 0 ; -VCE = 45V BDX45 - - 10 µA VBE = 0 ; -VCE = 60V BDX46 - - 10 VBE = 0 ; -VCE = 80V BDX47 - - 10 - IEBO Emitter cut-off current I C =0 ; VEB = 4V BDX45 - - 10 µA BDX46 - - 10 BDX47 - - 10 - VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=500 mA, -IB=0.5 mA BDX45 - - 1.3 V BDX46 - - 1.3 BDX47 - - 1.3 -IC=1.0 A, -IB=1.0 mA BDX46 - - 1.6 -IC=1.0 A, -IB=4.0 mA BDX45 - - 1.6 BDX47 - - 1.6 -IC=500 mA, -IB=0.5 mA Tj=150 °C BDX45 - - 1.3 BDX46 - - 1.3 BDX47 - - 1.3 -IC=1.0 A, -IB=1.0 mA Tj=150 °C BDX46 - - 1.8 -IC=1.0 A, -IB=4.0 mA Tj=150 °C BDX45 - - 1.6 BDX47 - - 1.6 - VBE(SAT) Base-Emitter saturation Voltage (*) -IC=500 mA, -IB=0.5 mA BDX45 - - 1.9 V BDX46 - - 1.9 BDX47 - - 1.9 -IC=1.0 A, -IB=1.0 mA BDX46 - - 2.2 -IC=1.0 A, -IB=4.0 mA BDX45 - - 2.2 BDX47 - - 2.2 hFE DC Current Gain -VCE=10.0 V -IC=150 mA BDX45 1000 - - BDX46 1000 - - BDX47 1000 - - -VCE=10.0 V -IC=500 mA BDX45 2000 - - BDX46 2000 - - BDX47 2000 - - hfe Small Signal Current Gain -VCE=5.0 V, -IC=500 mA f=35MHz BDX45 - 10 - - BDX46 - 10 - BDX47 - 10 - ton Turn-on time -IC=500 mA -IBon= IBoff=0.5 mA - 400 - ns toff Turn-off time - 1500 - ton Turn-on time -IC=1 A -IBon= IBoff=1.0 mA - 400 - ns toff Turn-off time - 1500 -

PNP BDX45 – BDX46 – BDX47 24/10/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-126 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS min max A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 typ. F 0.49 0.75 G 4.4 typ. L 15.7 typ. M 1.27 typ. N 3.75 typ. P 3.0 3.2 S 2.54 typ. Pin 1 : Emitter Pin 2 : Collector Pin 3 : Base