BDX42 COMSET | Alldatasheet

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Technical content

NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 COMSET SEMICONDUCTORS 1/3 The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary PNP types are the BDX45, BDX46 and BDX47 respectively. SILICON PLANAR DARLINGTON TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX42 60 BDX43 80 VCBO Collector-Base Voltage BDX44 90 V BDX42 45 BDX43 60 VCER Collector-EmitterVoltage BDX44 80 V BDX42 BDX43 VEBO Emitter-Base Voltage BDX44 5 V BDX42 BDX43 IC BDX44 BDX42 BDX43 IC Collector Current ICM BDX44 A BDX42 BDX43 IB Base Current BDX44 0.1 A BDX42 BDX43 PT Power Dissipation @ TC = 25° BDX44

1.25 Watts

-65 to +150

NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 COMSET SEMICONDUCTORS 2/3 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDX42 BDX43 RthJ-a Thermal Resistance, Junction to Ambient BDX44 100 BDX42 BDX43 RthJ-mb Thermal Resistance, Junction to Mounting base BDX44 K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VBE = 0 ; VCE = 45V BDX42 - - 10 VBE = 0 ; VCE = 60V BDX43 - - 10 ICES Collector cut-off current VBE = 0 ; VCE = 80V BDX44 - - 10 µA BDX42 - - 10 BDX43 - - 10 IEBO Emitter cut-off current IC =0 ; VEB = 4V BDX44 - - 10 µA BDX42 - - 1.3 BDX43 - - 1.3 IC=500 m A, IB=0.5 mA BDX44 - - 1.3 IC=1.0 A, IB=1.0 mA BDX43 - - 1.6 BDX42 - - 1.6 IC=1.0 A, IB=4.0 mA BDX44 - - 1.6 BDX42 - - 1.3 BDX43 - - 1.3 IC=500 m A, IB=0.5 mA Tj=150 °C BDX44 - - 1.3 IC=1.0 A, IB=1.0 mA Tj=150 °C BDX43 - - 1.8 BDX42 - - 1.6 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=1.0 A, IB=4.0 mA Tj=150 °C BDX44 - - 1.6 V BDX42 - - 1.9 BDX43 - - 1.9 IC=500 m A, IB=0.5 mA BDX44 - - 1.9 IC=1.0 A, IB=1.0 mA BDX43 - - 2.2 BDX42 - - 2.2 VBE(SAT) Base-Emitter saturation Voltage (*) IC=1.0 A, IB=4.0 mA BDX44 - - 2.2 V BDX42 1000 - - BDX43 1000 - - VCE=10 V, IC=150 mA BDX44 1000 - - BDX42 2000 - - BDX43 2000 - - hFE DC Current Gain VCE=10 V, IC=500 mA BDX44 2000 - -

NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 COMSET SEMICONDUCTORS 3/3 Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX42 - 10 - BDX43 - 10 - hfe Small Signal Current Gain VCE=5.0 V, IC=500 mA , f=35MHz BDX44 - 10 - BDX42 - 400 - BDX43 - 400 - ton Turn-on time BDX44 - 400 - BDX42 - 1500 - BDX43 - 1500 - toff Turn-off time IC=500 mA, IBon= -IBoff=0.5 mA BDX44 - 1500 - ns BDX42 - 400 - BDX43 - 400 - ton Turn-on time BDX44 - 400 - BDX42 - 1500 - BDX43 - 1500 - toff Turn-off time IC=1 A, IBon= -IBoff=1.0 mA BDX44 - 1500 - ns MECHANICAL DATA CASE TO-126 DIMENSIONS mm inches min max min max A 7.4 7.8 0.295 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 E 2.2 typ. 0.087 typ. F 0.49 0.75 0.019 0.029 G 4.4 typ. 0.173 typ. H 2.54 typ. 0.100 typ. L 15.7 typ. 0.618 typ. M 1.2 typ. 0.047 typ. N 3.8 typ. 0.149 typ. P 3.0 3.2 0.118 0.126 Pin 1 : Emitter Pin 2 : Collector Case : Base