BDX42_12 COMSET | Alldatasheet

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NPN BDX42 – BDX43– BDX44 24/10/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON PLANAR DARLINGTON TRANSISTORS The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary PNP types are the BDX45, BDX46 and BDX47 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage BDX42 60 V BDX43 80 BDX44 90 VCER Collector-EmitterVoltage BDX42 45 V BDX43 60 BDX44 80 VEBO Emitter-Base Voltage 5 V IC Collector Current IC 1 A ICM 2 IB Base Current 0.1 A PT Power Dissipation @ T C = 25° 1.25 Watts TJ Junction Temperature 150 °C TS Storage Temperature -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to Ambient 100 K/W RthJ-mb Thermal Resistance, Junction to Mounting base 10

NPN BDX42 – BDX43– BDX44 24/10/2012 COMSET SEMICONDUCTORS 2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICES Collector cut-off current VBE = 0 ; VCE = 45V BDX42 - - 10 µA VBE = 0 ; VCE = 60V BDX43 - - 10 VBE = 0 ; VCE = 80V BDX44 - - 10 IEBO Emitter cut-off current I C =0 ; VEB = 4V BDX42 - - 10 µA BDX43 - - 10 BDX44 - - 10 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=500 m A, IB=0.5 mA BDX42 - - 1.3 V BDX43 - - 1.3 BDX44 - - 1.3 IC=1.0 A, IB=1.0 mA BDX43 - - 1.6 IC=1.0 A, IB=4.0 mA BDX42 - - 1.6 BDX44 - - 1.6 IC=500 m A, IB=0.5 mA Tj=150 °C BDX42 - - 1.3 BDX43 - - 1.3 BDX44 - - 1.3 IC=1.0 A, IB=1.0 mA Tj=150 °C BDX43 - - 1.8 IC=1.0 A, IB=4.0 mA Tj=150 °C BDX42 - - 1.6 BDX44 - - 1.6 VBE(SAT) Base-Emitter saturation Voltage (*) IC=500 m A, IB=0.5 mA BDX42 - - 1.9 V BDX43 - - 1.9 BDX44 - - 1.9 IC=1.0 A, IB=1.0 mA BDX43 - - 2.2 IC=1.0 A, IB=4.0 mA BDX42 - - 2.2 BDX44 - - 2.2 hFE DC Current Gain VCE=10 V, IC=150 mA BDX42 1000 - - BDX43 1000 - - BDX44 1000 - - VCE=10 V, IC=500 mA BDX42 2000 - - BDX43 2000 - - BDX44 2000 - - hfe Small Signal Current Gain VCE=5.0 V, IC=500 mA f=35MHz BDX42 - 10 - - BDX43 - 10 - BDX44 - 10 - ton Turn-on time IC=500 mA IBon= -IBoff=0.5 mA - 400 - ns toff Turn-off time - 1500 - ton Turn-on time IC=1 A IBon= -IBoff=1.0 mA - 400 - ns toff Turn-off time - 1500 -

NPN BDX42 – BDX43– BDX44 24/10/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-126 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS min max A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 typ. F 0.49 0.75 G 4.4 typ. L 15.7 typ. M 1.27 typ. N 3.75 typ. P 3.0 3.2 S 2.54 typ. Pin 1 : Emitter Pin 2 : Collector Pin 3 : Base