BDX35 COMSET | Alldatasheet
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Technical content
NPN BDX35 – BDX36 – BDX37 * COMSET SEMICONDUCTORS 1 The BDX35, BDX36 and BDX37 are NPN transistors mounted in Jedec TO-126 plastic package. They are intented for use in high current switching applications and switching regulator circuits SILICON PLANAR EPITAXIAL POWER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX35 60 BDX36 60 VCEO Collector-Emitter Voltage BDX37 80 V BDX35 100 BDX36 120 VCBO Collector-Base Voltage BDX37 120 V BDX35 100 BDX36 120 VCES Collector-Emitter Voltage (VBE=0) BDX37 120 V BDX35 BDX36 VEBO Emitter-Base Voltage BDX37 5 V Symbol Ratings Value Unit BDX35 BDX36 IC(RMS) BDX37 BDX35 BDX36 IC Collector Current ICM BDX37 A BDX35 BDX36 IB BDX37 BDX35 BDX36 IB Base current IBM BDX37 A BDX35 BDX36 PT Power Dissipation @ Tmb = 75° BDX37
15 Watts
W/°C BDX35 BDX36 TJ Junction Temperature BDX37 150 °C BDX35 BDX36 TStg Storage Temperature BDX37 -65 to +150 °C
NPN BDX35 – BDX36 – BDX37 * COMSET SEMICONDUCTORS 2 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDX35 BDX36 RthJ-mb Thermal Resistance, Junction to mouting base BDX37
5 K/W
RthJ-a Thermal Resistance, Junction to ambient infree air BDX37
100 K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit IE=0 , VCB=80 V BDX35 - - 10 IE=0 , VCB=100 V BDX36 - - 10 IE=0 , VCB=100 V BDX37 - - 10 IE=0 , VCB=80 V , Tj = 100°C BDX35 - - 50 IE=0 , VCB=100 V,Tj = 100°C BDX36 - - 50 ICBO Collector cut-off current IE=0 , VCB=100 V,Tj = 100°C BDX37 - - 50 µA BDX35 - - 10 BDX36 - - 10 IC=0, VEB=4 V BDX37 - - 10 µA BDX35 - - 1 BDX36 - - 1 IEBO Emitter cut-offcurrent IC=0, VEB=5 V BDX37 - - 1 mA BDX35 - - 0,9 BDX36 - - 0,7 IC=5.0 A, IB=500 mA BDX37 - - 0,9 BDX35 - - 1,2 BDX36 - - - IC=7.0 A, IB=700 mA BDX37 - - 1,2 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=1A BDX36 - - 1,5 V BDX35 BDX36 IC=5.0 A, IB=500 mA BDX37 - - 1 ,6 BDX35 - - 2,0 IC=7.0 A, IB=700 mA BDX37 - - 2,0 VBE(SAT) Base-Emitter saturation Voltage (*) IC=10 A, IB=1A BDX36 - - 2,5 V BDX35 BDX36 BDX37 45 - 450 BDX35 BDX36 130 - hFE DC Current Gain (*) VCE=10 V, IC=500m A BDX37 - 80
NPN BDX35 – BDX36 – BDX37 * COMSET SEMICONDUCTORS 3 MECHANICAL DATA CASE TO-126 DIMENSIONS mm inches min max min max A 7.4 7.8 0.295 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 E 2.2 typ. 0.087 typ. F 0.49 0.75 0.019 0.029 G 4.4 typ. 0.173 typ. H 2.54 typ. 0.100 typ. L 15.7 typ. 0.618 typ. M 1.2 typ. 0.047 typ. N 3.8 typ. 0.149 typ. P 3.0 3.2 0.118 0.126 Pin 1 : Emitter Pin 2 : Collector Case : Base
NPN BDX35 – BDX36 – BDX37 * COMSET SEMICONDUCTORS 4