BDX33 COMSET | Alldatasheet

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NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 1/6 The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO- 220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX33 BDX34 45 BDX33A BDX34A 60 BDX33B BDX34B VCEO Collector-Emitter Voltage BDX33C BDX34C 100 V BDX33 BDX34 45 BDX33A BDX34A BDX33B BDX34B 80 VCEV Collector-EmitterVoltage I B=0 BDX33C BDX34C 100 V

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 2/6 Symbol Ratings Value Unit BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B IC(RMS) BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B IC Collector Current ICM BDX34C A BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B IB Base Current BDX34C 0.25 A BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B PT Power Dissipation @ TC = 25° BDX34C

70 Watts

W/°C BDX33 BDX33A BDX33B TJ Junction Temperature BDX33C BDX34 BDX34A BDX34B TS Storage Temperature BDX34C -65 to +150 °C

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 3/6 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B RthJ-C Thermal Resistance, Junction to Case BDX34C 1.78 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA BDX33C BDX34C 100 - - V BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - VCER(SUS) Collector-Emitter Sustaining Voltage (*) IB=100 mA, RBE=100Ω BDX33C BDX34C 100 - - V

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 4/6 Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - VCEV(SUS) Collector-Emitter Sustaining Voltage (*) IC=100 mA, VBE=-1.5 V BDX33C BDX34C 100 - - V VCB=22V BDX33 BDX34 - - VCB=30V BDX33A BDX34A - - VCB=40V BDX33B BDX34B - - TCASE=25°C VCB=50V BDX33C BDX34C - - 0.5 VCB=22V BDX33 BDX34 - - VCB=30V BDX33A BDX34A - - VCB=40V BDX33B BDX34B - - ICEO Collector Cutoff Current TCASE=100°C VCB=50V BDX33C BDX34C - - mA BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B IEBO Emitter Cutoff Current VBE=-5 V BDX34C - - 5.0 mA VCBO=-45 V BDX33 BDX34 - - VCBO=-60 V BDX33A BDX34A - - VCBO=-80 V BDX33B BDX34B - - ICBO Collector-Base Cutoff Current TCASE=25°C VCBO=100 V BDX33C BDX34C - - 0.2 mA

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 5/6 Symbol Ratings Test Condition(s) Min Typ Mx Unit VCBO=45 V BDX33 BDX34 - - VCBO=60 V BDX33A BDX34A - - VCBO=80 V BDX33B BDX34B - - ICBO Collector-Base Cutoff Current TCASE=100°C VCBO=100 V BDX33C BDX34C - - 5 mA BDX33 BDX33A BDX34 IC=4.0 A, IB=8.0 mA BDX34A - - 2.5 BDX33B BDX33C BDX34B VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3.0 A, IB=6.0 mA BDX34C - - 2.5 V BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B VF Forward Voltage (pulse method) IF=8 A BDX34C - - 4.0 V BDX33 BDX33A BDX34 IC=4.0 A, VCE=3.0V BDX34A - - 2.5 BDX33B BDX33C BDX34B VBE Base-Emitter Voltage (*) IC=3.0 A, VCE=3.0V BDX34C - - 2.5 V BDX33 BDX33A BDX34 VCE=3.0 V, IC=4.0 A BDX34A 750 - - BDX33B BDX33C BDX34B h FE DC Current Gain (*) VCE=3.0 V, IC=3.0 A BDX34C 750 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMSET SEMICONDUCTORS 6/6 MECHANICAL DATA CASE TO-220 DIMENSIONS mm inches A 9,86 0,39 B 15,73 0,62 C 13,37 0,52 D 6,67 0,26 E 4,44 0,17 F 4,21 0,16 G 2,99 0,11 H 17,21 0,68 L 1,29 0,05 M 3,6 0,14 N 1,36 0,05 P 0,46 0,02 R 2,1 0,08 S 5 0,19 T 2,52 0,098 U 0,79 0,03 Pin 1 : base Pin 2 : Collector Pin 3 : emitter