BDX33A SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C
DESCRIPTION
- With TO-220C package
- High DC current gain
- DARLINGTON
- Complement to type BDX34/A/B/C
APPLICATIONS
- For power linear and switching
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDX33 45 BDX33A 60 BDX33B 80 VCBO Collector-base voltage BDX33C Open emitter 100 V BDX33 45 BDX33A 60 BDX33B 80 VCEO Collector-emitter voltage BDX33C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 10 A ICM Collector current-Pulse 15 A IB Base current 0.25 A PC Collector power dissipation T C=25 70 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.78 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX33 45 BDX33A 60 BDX33B 80 VCEO(SUS) Collector-emitter sustaining voltage BDX33C IC=0.1A, IB=0 100 V BDX33/33A I C=4A ,IB=8mA VCEsat Collector-emitter saturation voltage BDX33B/33C I C=3A ,IB=6mA 2.5 V BDX33/33A I C=4A ; VCE=3V VBE Base-emitter on voltage BDX33B/33C I C=3A ; VCE=3V 2.5 V BDX33 V CB=45V, IE=0 BDX33A V CB=60V, IE=0 BDX33B V CB=80V, IE=0 ICBO Collector cut-off current BDX33C V CB=100V, IE=0 0.2 mA BDX33 V CE=22V, IB=0 BDX33A V CE=30V, IB=0 BDX33B V CE=40V, IB=0 ICEO Collector cut-off current BDX33C V CE=50V, IB=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 5 mA BDX33/33A I C=4A ; VCE=3V hFE DC current gain BDX33B/33C I C=3A ; VCE=3V 750 VF Forward diode voltage I F=8A 4.0 V
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX33/A/B/C PACKAGE OUTLINE Fig.2 Outline dimensions