BDX33_12 COMSET | Alldatasheet

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NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 1/4 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage I B=0 BDX33 45 V BDX33A 60 BDX33B 80 BDX33C 100 VCBO Collector-Base Voltage I E=0 BDX33 45 V BDX33A 60 BDX33B 80 BDX33C 100 IC Collector Current IC(RMS) 10 A ICM 15 IB Base Current 0.25 A PT Power Dissipation @ T C = 25° 70 W TJ Junction Temperature -65 to +150 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.78 °C/W

NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 2/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA BDX33 45 - - V BDX33A 60 - - BDX33B 80 - - BDX33C 100 - - VCER(SUS) Collector-Emitter Sustaining Voltage (*) IB=100 mA, RBE=100Ω BDX33 45 - - V BDX33A 60 - - BDX33B 80 - - BDX33C 100 - - VCEV(SUS) Collector-Emitter Sustaining Voltage (*) IC=100 mA VBE=-1.5 V BDX33 45 - - V BDX33A 60 - - BDX33B 80 - - BDX33C 100 - - ICEO Collector Cutoff Current VCB=22V BDX33 - - 0.5 mA VCB=30V BDX33A - - VCB=40V BDX33B - - VCB=50V BDX33C - - VCB=22V, TC=100°C BDX33 - -

10 VCB=30V, TC=100°C BDX33A - -

VCB=40V, TC=100°C BDX33B - - VCB=50V, TC=100°C BDX33C - - IEBO Emitter Cutoff Current V BE=-5 V BDX33 - - 5.0 mA BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C ICBO Collector-Base Cutoff Current VCBO=45 V BDX33 - - 0.2 mA VCBO=60 V BDX33A - - VCBO=80 V BDX33B - - VCBO=100 V BDX33C - -

NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 3/4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector-Base Cutoff Current VCBO=45 V TC=100°C BDX33 - - 5 mA VCBO=60 V TC=100°C BDX33A - - VCBO=80 V TC=100°C BDX33B - - VCBO=100 V TC=100°C BDX33C - - VCE(SAT) Collector-Emitter saturation Voltage (*) I C=4.0 A, IB=8.0 mA BDX33 - - 2.5 V BDX33A BDX33B BDX33C IC=3.0 A, IB=6.0 mA BDX33 - - 2.5 BDX33A BDX33B BDX33C VF Forward Voltage (pulse method) IF=8 A BDX33 - - 4.0 V BDX33A BDX33B BDX33C VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=3.0V BDX33 - - 2.5 V BDX33A IC=3.0 A, VCE=3.0V BDX33B - - 2.5 BDX33C hFE DC Current Gain (*) VCE=3.0 V, IC=4.0 A BDX33 750 - - - BDX33A VCE=3.0 V, IC=3.0 A BDX33B 750 - - BDX33C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

NPN BDX33 – BDX33A – BDX33B – BDX33C 23/10/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. Max. A 9,90 10,30 B 15,65 15,90 C 13,20 13,40 D 6,45 6,65 E 4,30 4,50 F 2,70 3,15 G 2,60 3,00 H 15,75 17.15 L 1,15 1,40 M 3,50 3,70 N - 1,37 P 0,46 0,55 R 2,50 2,70 S 4,98 5,08 T 2.49 2.54 U 0,70 0,90 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Case : Collector