BDX20 COMSET | Alldatasheet
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Technical content
VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage -140 V VCEX Collector-Emitter Voltage V BE=1.5 V -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current – Continuous -10 A IB Base Current – Continuous -7 A PTOT Total Device Dissipation 117 Watts TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, Junction to Case 1.5 °C/W PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(SUS) Collector-Emitter Sustaining Voltage (*) IC=-200 mA, IB=0 -140 - - V VCEX Collector-Emitter Breakdown Voltage (*) IC=-100 mA, VBE=1.5 V -160 - - V VCE=-140 V, VBE=1.5 V - - -1.0ICEX Collector Cutoff Current VCE=-140 V, VBE=1.5 V, TCASE=150°C - - -10 mA ICBO Collector-Base Cutoff Current VCB=-140 V, IE=0 - - -1.0 mA IEBO Emitter-Base Cutoff Current V BE=-7.0 V, IC=0 - - -5.0 mA IC=-3.0 A, VCE=-4.0 V 20 - 70h21E Static Forward Current Transfer Ratio (*) IC=10 A, VCE=-4.0 V - 10 - - IC=-3.0 A, IB=-0.3 A - - -1.0VCE(SAT) Collector-Emitter Saturation Voltage (*) IC=-10 A, IB=-2 A - - -5.0 V fT Transition Frequency V CE=-10 V, IC=-1.0 Adc, f=1.0 MHz 4 - - MHz In accordance with JEDEC Registration Data (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16 Pin 1 : Base Pin 2 : Emitter Case : Collector