BDX18 SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18

DESCRIPTION

  • With TO-3 package
  • High switching speed

APPLICATIONS

  • LF large signal power amplification
  • Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits PINNING (See Fig.2) PIN DESCRIPTION

1 Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -15 A IB Base current -7 A PT Total power dissipation T C=25 117 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 /W Fig.1 simplified outline (TO-3) and symbol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-0.2A ; IB=0 -60 V V(BR) EBO Emitter-base breakdown voltage I E=-1mA ; IC=0 -7 V VCEsat Collector-emitter saturation voltage I C=-4A ;IB=-0.4A -1.1 V VBE Base-emitter voltage I C=-4A;VCE=-4V -1.8 V ICEX Collector cut-off current VCE=-90V;VBE=1.5V VCE=-60V;VBE=1.5V;TC=150 -5 -10 mA IEBO Emitter cut-off current V EB=-7V; IC=0 -5 mA hFE DC current gain I C=-4A ; VCE=-4V 20 70 fT Transition frequency I C=-1A ; VCE=-10V;f=1MHz 4 MHz

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 PACKAGE OUTLINE Fig.2 Outline dimensions