BDX18_12 COMSET | Alldatasheet

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BDX18 – BDX18N 05/10/2012 COMSET SEMICONDUCTORS 1 | 3 PPNNPP SSIILLIICCOONN TTRRAANNSSIISSTTOORR EEPPIITTAAXXIIAALL BBAASSEE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications :

  • Series and shunt regulators
  • High Fidelity Amplifiers
  • Power-switching circuits
  • Solenoid drivers ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX18 -60 V BDX18N VCER Collector-Emitter Voltage RBE=100Ω BDX18 -70 V BDX18N -65 VEBO Collector-Emitter Voltage BDX18 -7 V BDX18N VCBO Emitter-Base Voltage BDX18 -100 V BDX18N -70 VCEX Collector-Emitter Voltage VBE=+1.5 V BDX18 -90 V BDX18N -70 IC Collector Current BDX18 -15 A BDX18N IB Base Current BDX18 -7 A BDX18N PT Power Dissipation @ T C = 25° 117 W TJ Junction Temperature -65 to +200 °C TS Storage Temperature

BDX18 – BDX18N 05/10/2012 COMSET SEMICONDUCTORS 2 | 3 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=200 mA IB=0 BDX18 -60 -60 - - V BDX18N VCEX(SUS) Collector-Emitter Breakdown Voltage (*) IC=-100 mA VBE=1.5 V BDX18 -90 - - V BDX18N -70 - - VCER(SUS) Collector-Emitter Breakdown Voltage (*) IC=-200 mA RBE=100 Ω BDX18 -70 - - V BDX18N -65 - - ICEX Collector-Emitter Cutoff Current VCE=-90 V VBE=1.5 V BDX18 - - -5 mA VCE=-60 V, VBE=1.5 V TCASE=150°C -10 VCE=-70 V VBE=1.5 V BDX18N - - -5 VCE=-60 V, VBE=1.5 V TCASE=150°C - - -10 IEBO Emitter-Base Cutoff Current VEB=-7 V BDX18 - - -5 mA BDX18N VBE Base-Emitter Voltage (*) IC=-4.0 A, VCE=-4.0V BDX18 - - -1.8 V BDX18N VCE(SAT) Collector-Emitter Saturation Voltage IC=-4.0 A, IB=-0.4V BDX18 - - -1.1 V BDX18N fT Transition Frequency IC =-1A, VCE=-10 V f=1 MHz BDX18 - 4 - MHz BDX18N h21E Static Forward Current Transfer Ratio (*) VCE=-4.0 V, IC=-4.0 A BDX18 20 - 70 - BDX18N (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

BDX18 – BDX18N 05/10/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-3 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector