BDW42 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW42
DESCRIPTION
- With TO-220C package
- Complement to type BDW47
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
APPLICATIONS
- For general purpose and low speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 15 A IB Base current 0.5 A PD Total power dissipation T C=25 85 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.47 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW42 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=30mA, IB=0 100 V VCEsat-1 Collector-emitter saturation voltage I C=5A ,IB=10mA 2.0 V VCEsat-2 Collector-emitter saturation voltage I C=10A ,IB=50mA 3.0 V VBE Base-emitter on voltage I C=10A ; VCE=4V 3.0 V ICBO Collector cut-off current V CB=100V, IE=0 1.0 mA ICEO Collector cut-off current V CE=50V, IB=0 2.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 2.0 mA hFE-1 DC current gain I C=5A ; VCE=4V 1000 hFE-2 DC current gain I C=10A ; VCE=4V 250 fT Transition frequency I C=3A ; VCE=3V;f=1MHz 4.0 MHz COB Output capacitance I E=0 ; VCB=10V;f=0.1MHz 200 pF
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW42 PACKAGE OUTLINE Fig.2 Outline dimensions