BDW83 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D
DESCRIPTION
- With TO-3PN package
- Complement to type BDW84/84A/84B/84C/84D
- DARLINGTON
- High DC current gain
APPLICATIONS
- For use in power linear and switching applications. PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 VCBO Collector-base voltage BDW83D Open emitter 120 V BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 VCEO Collector-emitter voltage BDW83D Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 0.5 A TC=25 150 PC Collector power dissipation Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 V(BR)CEO Collector-emitter breakdown voltage BDW83D IC=30mA, IB=0 120 V VCEsat-1 Collector-emitter saturation voltage I C=6A ,IB=12mA 2.5 V VCEsat-2 Collector-emitter saturation voltage I C=15A ,IB=150mA 4.0 V VBE Base-emitter on voltage I C=6A ; VCE=3V 2.5 V BDW83 VCB=45V, IE=0 TC=150 0.5 5.0 BDW83A VCB=60V, IE=0 TC=150 0.5 5.0 BDW83B VCB=80V, IE=0 TC=150 0.5 5.0 BDW83C VCB=100V, IE=0 TC=150 0.5 5.0 ICBO Collector cut-off current BDW83D VCB=120V, IE=0 TC=150 0.5 5.0 mA BDW83 V CE=30V, IB=0 BDW83A V CE=30V, IB=0 BDW83B V CE=40V, IB=0 BDW83C V CE=50V, IB=0 ICEO Collector cut-off current BDW83D V CE=60V, IB=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 2 mA hFE-1 DC current gain I C=6A ; VCE=3V 750 20000 hFE-2 DC current gain I C=15A ; VCE=3V 100 VEC Diode forward voltage I E=15A 3.5 V ton Turn-on time 0.9 µs toff Turn-off time IC = 10 A, IB1 =-IB2=40 mA RL=3B; VBE(off) = -4.2V Duty CycleC2% 7.0 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 0.83 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDW83/83A/83B/83C/83D PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)