BDV67A COMSET | Alldatasheet

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BDV67A, B, C, D COMSET SEMICONDUCTORS 1/5 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDV67A 80 BDV67B 100 BDV67C 120 VCEO Collector-Emitter Voltage BDV67D 150 V BDV67A 100 BDV67B 120 BDV67C 140 VCBO Collector-Base Voltage BDV67D 160 V BDV67A BDV67B BDV67C VEBO Emitter-Base Voltage BDV67D 5.0 V BDV67A BDV67B BDV67C IC BDV67D BDV67A BDV67B BDV67C IC Collector Current ICM BDV67D A BDV67A BDV67B BDV67C IB Base Current BDV67D 0.5 A BDV67A BDV67B BDV67C PT Power Dissipation @ T mb = 25° C BDV67D

200 Watts

-65 to +150 The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D. NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS PPOOWWEERR TTRRAANNSSIISSTTOORRSS

BDV67A, B, C, D COMSET SEMICONDUCTORS 2/5 THERMAL CHARACTERISTICS Symbol Ratings Value Unit BDV67A BDV67B BDV67C RthJ-mb Thermal Resistance, Junction to Mounting Base BDV67D 0.625 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCE=40 V BDV67A - - VCE=50 V BDV67B - - VCE=60 V BDV67C - - ICEO Collector Cutoff Current VCE=75 V BDV67D - - 3 mA BDV67A - - BDV67B BDV67C IEBO Emitter Cutoff Current VBE=5 V BDV67D 5.0 mA BDV67A - - BDV67B BDV67C Tj=25°C, VCB= VCBO BDV67D BDV67A - - BDV67B BDV67C ICBO Collector-Base Cutoff Current Tj=150°C, VCB= VCBO BDV67D mA

BDV67A, B, C, D COMSET SEMICONDUCTORS 3/5 Symbol Ratings Test Condition(s) Min Typ M x Unit VCE=3 V, IC=1 A - 3000 - VCE=3 V, IC=10 A 1000 - - hFE DC Current Gain VCE=3 V, IC=16 A - 1000 - BDV67A BDV67B BDV67C VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mA BDV67D - - 2 V BDV67A BDV67B BDV67C VBE Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A BDV67D - - 2,5 V BDV67A BDV67B BDV67C VF Diode forward voltage IF=10 A BDV67D - - 3 V BDV67A BDV67B BDV67C Cc IE=0 A, VCB=10V BDV67D - 300 - pF BDV67A BDV67B BDV67C ton BDV67D - 1 - BDV67A BDV67B BDV67C toff Switching times VCC=12V, IC=-10 A IB1=-IB2=0.04 A BDV67D - 3.5 - µs BDV67A BDV67B BDV67C fhfe VCE=-3 V, IC=-5 A BDV67D - 60 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

BDV67A, B, C, D COMSET SEMICONDUCTORS 4/5 MECHANICAL DATA CASE TO-3P (TO247) Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter

BDV67A, B, C, D COMSET SEMICONDUCTORS 5/5 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice