BDV67A_12 COMSET | Alldatasheet
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26/09/2012 COMSET SEMICONDUCTORS 1/5 NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS PPOOWWEERR TTRRAANNSSIISSTTOORRSS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDV67 60 V BDV67A 80 BDV67B 100 BDV67C 120 BDV67D 150 VCBO Collector-Base Voltage BDV67 80 V BDV67A 100 BDV67B 120 BDV67C 140 BDV67D 160 VEBO Emitter-Base Voltage BDV67 5.0 V BDV67A BDV67B BDV67C BDV67D IB Base Current BDV67 0.5 A BDV67A BDV67B BDV67C BDV67D IC Collector Current BDV67 A BDV67A BDV67B BDV67C BDV67D ICM BDV67 BDV67A BDV67B BDV67C BDV67D
26/09/2012 COMSET SEMICONDUCTORS 2/5 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit PT Power Dissipation @ Tmb = 25° C BDV67 200 W BDV67A BDV67B BDV67C BDV67D TJ Junction Temperature BDV67 150 BDV67A BDV67B BDV67C BDV67D TS Storage Temperature BDV67 -65 to +150 BDV67A BDV67B BDV67C BDV67D THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to Mounting Base 0.625 °C / W SWITCHING TIMES Symbol Ratings Test Condition(s) Min Typ Max Unit ton turn-on time IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA - 1 - µs toff turn-off time - 3.5 -
26/09/2012 COMSET SEMICONDUCTORS 3/5
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit ICEO Collector Cutoff Current VCE= 30 V, IB= 0 BDV67 - - 1 mA VCE= 40 V, IB= 0 BDV67A - - VCE= 50 V, IB= 0 BDV67B - - VCE= 60 V, IB= 0 BDV67C - - VCE= 75 V, IB= 0 BDV67D - - IEBO Emitter Cutoff Current V BE= 5 V, Ic= 0 BDV67 - - 5.0 mA BDV67A - - BDV67B - - BDV67C - - BDV67D - - ICBO Collector-Base Cutoff Current IB= 0 Tj=25°C VCB= 80 V BDV67 - - mA VCB= 100 V BDV67A - - VCB= 120 V BDV67B - - VCB= 140 V BDV67C - - VCB= 160 V BDV67D - - IB= 0 Tj=150° C VCB= 40 V BDV67 - - VCB= 50 V BDV67A - - VCB= 60 V BDV67B - - VCB= 70 V BDV67C - - VCB= 80 V BDV67D - - VCEO Collector-emitter Breakdown Voltage (*) IC= 30 mA, IB= 0 BDV67 60 - - V BDV67A 80 - - BDV67B 100 - - BDV67C 120 - - BDV67D 150 - - hFE DC Current Gain (*) VCE= 3 V, IC= 1 A BDV67 BDV67A BDV67B BDV67C BDV67D - 3000 - VCE= 3 V, IC= 10 A 1000 - - VCE= 3 V, IC= 16 A - 1000 - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 10 A, IB= 40 mA BDV67 - - 2 V BDV67A BDV67B BDV67C BDV67D
26/09/2012 COMSET SEMICONDUCTORS 4/5 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VBE Base-Emitter Voltage (*) VCE= 3 V, IC= 10 A BDV67 - - 2,5 V BDV67A BDV67B BDV67C BDV67D VF Diode forward voltage I F= 10 A BDV67 - - 3 V BDV67A BDV67B BDV67C BDV67D Cc Collector capacitance IE= 0 A, VCB= 10 V f= 1 MHz BDV67 - 300 - pF BDV67A BDV67B BDV67C BDV67D (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012 COMSET SEMICONDUCTORS 5/5 MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) Min. Max. A 15.20 1600 B 1.90 2.10 C 4.60 5.00 D 3.10 3.30 E 9.60 F 2.00 G 0.35 0.55 H 1.40 J 5.35 5.55 K 20.00 L 19.60 20.20 M 0.95 1.25 N 2.00 O 3.00 P 4.00 R 4.00 S 1.80 T 4.80 5.20 Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector