BDV66 COMSET | Alldatasheet

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26/09/2012 COMSET SEMICONDUCTORS 1/4 PPNNPP SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS PPOOWWEERR TTRRAANNSSIISSTTOORRSS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDV66 -80 V BDV66A -100 BDV66B -120 BDV66C -140 VCBO Collector-Base Voltage BDV66 -80 V BDV66A -100 BDV66B -120 BDV66C -140 VEBO Emitter-Base Voltage BDV66 -5.0 V BDV66A BDV66B BDV66C IC Collector Current BDV66 -16 A BDV66A BDV66B BDV66C ICM Collector Peak Current BDV66 -20 BDV66A BDV66B BDV66C IB Base Current BDV66 -0.5 A BDV66A BDV66B BDV66C

26/09/2012 COMSET SEMICONDUCTORS 2/4 ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS Symbol Ratings Value Unit Rthj-c Thermal Resistance, Junction to Case 0.625 °C / W SWITCHING TIMES Symbol Ratings Test Condition(s) Value Unit Min Typ Max ton turn-on time IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA - 1 - µs toff turn-off time - 3.5 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 % Symbol Ratings Value Unit PT Power Dissipation T mb = 25° C BDV66

175 Watts BDV66A

-65 to +150 BDV66A BDV66B BDV66C

26/09/2012 COMSET SEMICONDUCTORS 3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICEO Collector Cutoff Current VCE= -40 V, IB= 0 BDV66 - - -1 mA VCE= -50 V, IB= 0 BDV66A VCE= -60 V, IB= 0 BDV66B VCE= -70 V, IB= 0 BDV66C IEBO Emitter Cutoff Current VBE= -5 V, IC= 0 BDV66 - - -5 mA BDV66A BDV66B BDV66C ICBO Collector Cutoff Current I E= 0 Tj=25°C VCB= -80 V BDV66 - - -1 mA VCB= -100 V BDV66A VCB= -120 V BDV66B VCB= -140 V BDV66C IE= 0 Tj=150°C VCB= -40 V BDV66 - - -5 VCB= -50 V BDV66A VCB= -60 V BDV66B VCB= -70 V BDV66C VCEO Collector-Emitter Breakdown Voltage (*) IC= -100 mA, IB = 0 BDV66 -60 - - V BDV66A -80 - BDV66B -100 - - BDV66C -120 - - hFE DC Current Gain (*) V CE= -3 V, IC= -10 A BDV66 1000 - - - BDV66A BDV66B BDV66C VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -40 mA BDV66 - - -2 V BDV66A BDV66B BDV66C VBE Base-Emitter Voltage(*) VCE= -3 V, IC= -10 A BDV66 - - -2,5 V BDV66A BDV66B BDV66C COB Output Capacitance VCB= -10 V, IE= 0 ftest= 1 MHz BDV66 - 300 - pF BDV66A BDV66B BDV66C

26/09/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) Min. Max. A 15.20 1600 B 1.90 2.10 C 4.60 5.00 D 3.10 3.30 E 9.60 F 2.00 G 0.35 0.55 H 1.40 J 5.35 5.55 K 20.00 L 19.60 20.20 M 0.95 1.25 N 2.00 O 3.00 P 4.00 R 4.00 S 1.80 T 4.80 5.20 Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector