BDV65 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C
DESCRIPTION
- With TO-3PN package
- Complement to type BDV64/64A/64B/64C
- DARLINGTON
- High DC current gain
APPLICATIONS
- For use in general purpose amplifier applications. PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDV65 60 BDV65A 80 BDV65B 100 VCBO Collector-base voltage BDV65C Open emitter 120 V BDV65 60 BDV65A 80 BDV65B 100 VCEO Collector-emitter voltage BDV65C Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 15 A IB Base current 0.5 A TC=25 125 PC Collector power dissipation Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDV65 60 BDV65A 80 BDV65B 100 V(BR)CEO Collector-emitter breakdown voltage BDV65C IC=30mA, IB=0 120 V VCEsat Collector-emitter saturation voltage I C=5A ,IB=20mA 2.0 V VBE Base-emitter on voltage I C=5A ; VCE=4V 2.5 V BDV65 VCB=60V, IE=0 VCB=30V, IE=0;TC=150 0.4 2.0 BDV65A VCB=80V, IE=0 VCB=40V, IE=0;TC=150 0.4 2.0 BDV65B VCB=100V, IE=0 VCB=50V, IE=0;TC=150 0.4 2.0 ICBO Collector cut-off current BDV65C VCB=120V, IE=0 VCB=60V, IE=0;TC=150 0.4 2.0 mA BDV65 V CE=30V, IB=0 BDV65A V CE=40V, IB=0 BDV65B V CE=50V, IB=0 ICEO Collector cut-off current BDV65C V CE=60V, IB=0 2 mA IEBO Emitter cut-off current V EB=5V; IC=0 5 mA hFE DC current gain I C=5A ; VCE=4V 1000 VEC Diode forward voltage I E=10A 3.5 V THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.0 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDV65/65A/65B/65C PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)