BDV65 COMSET | Alldatasheet
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26/09/2012 COMSET SEMICONDUCTORS 1/4 NNNNPP SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS PPOOWWEERR TTRRAANNSSIISSTTOORRSS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDV65 60 V BDV65A 80 BDV65B 100 BDV65C 120 VCBO Collector-Base Voltage BDV65 60 V BDV65A 80 BDV65B 100 BDV65C 120 VEBO Emitter-Base Voltage BDV65
5.0 V BDV65A
A BDV65A BDV65B BDV65C ICM Collector Peak Current BDV65
15 BDV65A
0.5 A BDV65A
26/09/2012 COMSET SEMICONDUCTORS 2/4 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit PT Power Dissipation Tmb = 25° C BDV65 125 Watts BDV65A BDV65B BDV65C Tmb = 25° C BDV65
3.5 BDV65A
-65 to +150 BDV65A BDV65B BDV65C THERMAL CHARACTERISTICS Symbol Ratings Value Unit Rthj-c Thermal Resistance, Junction to Case BDV65 °C / W BDV65A BDV65B BDV65C Rthj-a Thermal Resistance, Junction to Ambient BDV65
35.7 BDV65A
26/09/2012 COMSET SEMICONDUCTORS 3/4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit ICEO Collector Cutoff Current VCE= 30 V, IB= 0 BDV65 - - 2 mA VCE= 40 V, IB= 0 BDV65A VCE= 50 V, IB= 0 BDV65B VCE= 60 V, IB= 0 BDV65C IEBO Emitter Cutoff Current VBE= 5 V, IC= 0 BDV65 - - 5 mA BDV65A BDV65B BDV65C ICBO Collector Cutoff Current IE= 0 Tj=25°C VCB= 60 V BDV65 - - 0.4 mA VCB= 80 V BDV65A VCB= 100 V BDV65B VCB= 120 V BDV65C IE= 0 Tj=150°C VCB= 30 V BDV65 - - 2 VCB= 40 V BDV65A VCB= 50 V BDV65B VCB= 60 V BDV65C VCEO Collector-Emitter Breakdown Voltage (*) IC= 30 mA, IB = 0 BDV65 60 - - V BDV65A 80 - BDV65B 100 - - BDV65C 120 - - hFE DC Current Gain (*) V CE= 4 V, IC= 5 A BDV65 1000 - - - BDV65A BDV65B BDV65C VCE(SAT) Collector-Emitter saturation Voltage (*) I C= 5 A, IB= 20 mA BDV65 - - 2 V BDV65A BDV65B BDV65C VBE Base-Emitter Voltage(*) VCE= 4 V, IC= 5 A BDV65 - - 2,5 V BDV65A BDV65B BDV65C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
26/09/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) Min. Max. A 15.20 1600 B 1.90 2.10 C 4.60 5.00 D 3.10 3.30 E 9.60 F 2.00 G 0.35 0.55 H 1.40 J 5.35 5.55 K 20.00 L 19.60 20.20 M 0.95 1.25 N 2.00 O 3.00 P 4.00 R 4.00 S 1.80 T 4.80 5.20 Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector