BDV64 COMSET | Alldatasheet

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26/09/2012 COMSET SEMICONDUCTORS 1/4 PPNNPP SSIILLIICCOONN DDAARRLLIINNGGTTOONNSS PPOOWWEERR TTRRAANNSSIISSTTOORRSS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV65-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDV64 -60 V BDV64A -80 BDV64B -100 BDV64C -120 VCBO Collector-Base Voltage BDV64 -60 V BDV64A -80 BDV64B -100 BDV64C -120 VEBO Emitter-Base Voltage BDV64 -5.0 V BDV64A BDV64B BDV64C IC Collector Current BDV64 -12 A BDV64A BDV64B BDV64C ICM Collector Peak Current BDV64 -15 BDV64A BDV64B BDV64C IB Base Current BDV64 -0.5 A BDV64A BDV64B BDV64C

26/09/2012 COMSET SEMICONDUCTORS 2/4 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit PT Power Dissipation T mb = 25° C BDV64 125 W BDV64A BDV64B BDV64C Tmb = 25° C BDV64

3.5 BDV64A

-65 to +150 BDV64A BDV64B BDV64C THERMAL CHARACTERISTICS Symbol Ratings Value Unit Rthj-c Thermal Resistance, Junction to Case BDV64 °C / W BDV64A BDV64B BDV64C Rthj-a Thermal Resistance, Junction to Ambient BDV64

35.7 BDV64A

26/09/2012 COMSET SEMICONDUCTORS 3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICEO Collector Cutoff Current VCE= -30 V, IB= 0 BDV64 - - -2 mA VCE= -40 V, IB= 0 BDV64A VCE= -50 V, IB= 0 BDV64B VCE= -60 V, IB= 0 BDV64C IEBO Emitter Cutoff Current V BE= -5 V, IC= 0 BDV64 - - -5 mA BDV64A BDV64B BDV64C ICBO Collector Cutoff Current IE= 0 Tj=25°C VCB= -60 V BDV64 - - -0.4 mA VCB= -80 V BDV64A VCB= -100 V BDV64B VCB= -120 V BDV64C IE= 0 Tj=150°C VCB= -30 V BDV64 - - -2 VCB= -40 V BDV64A VCB= -50 V BDV64B VCB= -60 V BDV64C VCEO Collector-Emitter Breakdown Voltage (*) IC= -30 mA, IB = 0 BDV64 -60 - - V BDV64A -80 - BDV64B -100 - - BDV64C -120 - - hFE DC Current Gain (*) V CE= -4 V, IC= -5 A BDV64 1000 - - - BDV64A BDV64B BDV64C VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -5 A, IB= -20 mA BDV64 - - -2 V BDV64A BDV64B BDV64C VBE Base-Emitter Voltage(*) VCE= -4 V, IC= -5 A BDV64 - - -2,5 V BDV64A BDV64B BDV64C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %

26/09/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) Min. Max. A 15.20 1600 B 1.90 2.10 C 4.60 5.00 D 3.10 3.30 E 9.60 F 2.00 G 0.35 0.55 H 1.40 J 5.35 5.55 K 20.00 L 19.60 20.20 M 0.95 1.25 N 2.00 O 3.00 P 4.00 R 4.00 S 1.80 T 4.80 5.20 Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector