BD953 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD953
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- High current capability
APPLICATIONS
- For medium power linear and switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A PC Collector dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD953 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage I E=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=2A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=100V; IE=0 50 µA IEBO Emitter cut-off current V EB=7V; IC=0 50 µA hFE-1 DC current gain I C=0.5A ; VCE=4V 40 hFE-2 DC current gain I C=2A ; VCE=4V 20 fT Transition frequency I C=0.5A ; VCE=4V 3 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD953 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)