BD909

BD909 COMSET | Alldatasheet

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BD909 – BD911 25/09/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BD909 BD911 VCBO Collector-Base Voltage I E = 0 80 100 V VCEO Collector-Emitter Voltage I B = 0 80 100 V VEBO Emitter-Base Voltage I C = 0 5 V IC Collector Current 15 A IE Emitter Current 15 A IB Base Current 5 A Pt Power Dissipation 90 W Tj Junction Temperature 150 °C Tstg Storage Temperature range -65 to 150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb From junction to mounting base 1.4 °C/W SILICON POWER TRANSISTORS

BD909 – BD911 25/09/2012 COMSET SEMICONDUCTORS 2 | 3 SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Value Unit Min Typ Max ICBO Collector Cutoff Current VCB = 80 V TJ = 25°C BD909 - - 0.5 mA VCB = 100 V BD911 VCB = 80 V TJ = 150°C BD909 - - 5 VCB = 100 V BD911 ICEO Collector Cutoff Current VCE = 40 V BD909 - - 1 mA VCE = 50 V BD911 IEBO Emitter Cutoff Current V EB = 5 V, IC = 0 BD909 - - 1 mA BD911 VCE0sust Collector-Emitter Sustaining Voltage (*) IB = 0, IC = 0.1 A BD909 80 - - V BD911 100 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC = 5 A, IB = 500 mA BD909 - - 1 V BD911 IC =10 A, IB = 2.5 A BD909 - - 3 BD911 VBE(SAT) Base-Emitter Saturation Voltage (*) IC =10 A, IB = 2.5 A BD909 - - 2.5 V BD911 VBE Base-Emitter Voltage (*) IC = 5A, VCE = 4 V BD909 - - 1.5 V BD911 hFE DC Current Gain (*) I C = 0.5A, VCE = 4 V BD909 40 - 250 BD911 hFE DC Current Gain (*) I C = 5A, VCE = 4 V BD909 15 - 150 BD911 hFE DC Current Gain (*) I C = 10A, VCE = 4 V BD909 5 - - BD911 fT Transition Frequency I C = 0.5A, VCE = 4 V BD909 3 - - MHz BD911 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5%

BD909 – BD911 25/09/2012 COMSET SEMICONDUCTORS 3 | 3 SEMICONDUCTORS MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. Max. A 9,90 10,30 B 15,65 15,90 C 13,20 13,40 D 6,45 6,65 E 4,30 4,50 F 2,70 3,15 G 2,60 3,00 H 15,75 17.15 L 1,15 1,40 M 3,50 3,70 N - 1,37 P 0,46 0,55 R 2,50 2,70 S 4,98 5,08 T 2.49 2.54 U 0,70 0,90 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector