BD900

BD896 COMSET | Alldatasheet

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Technical content

BD896 – BD898 – BD900 – BD902 25/09/2012 COMSET SEMICONDUCTORS 1 | 4 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage BD896 -45 V BD898 -60 BD900 -80 BD902 -100 VCEO Collector-Emitter Voltage BD896 -45 V BD898 -60 BD900 -80 BD902 -100 VEBO Emitter-Base Voltage BD896 -5 V BD898 BD900 BD902 IC Collector Current BD896 -8 A BD898 BD900 BD902 IB Base Current BD896 -300 mA BD898 BD900 BD902 PT Power Dissipation Tc = 25° 70 Watts Ta = 25° 2 TJ Junction Temperature 150 Ts Storage Temperature range -65 to +150

BD896 – BD898 – BD900 – BD902 25/09/2012 COMSET SEMICONDUCTORS 2 | 4 SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE= 0 VCB = -45 V TC=25°C BD896 - - -0.2 mA IE= 0 VCB = -60 V BD898 IE= 0 VCB = -80 V BD900 IE= 0 VCB = -100 V BD902 IE= 0 VCB = -45 V TC=100° C BD896 - - -2 mA IE= 0 VCB = -60 V BD898 IE= 0 VCB = -80 V BD900 IE= 0 VCB = -100 V BD902 ICEO Collector Cutoff Current I E= 0, VCE = - 30 V BD896 - - -0.5 mA IE= 0, VCE = - 30 V BD898 IE= 0, VCE = - 40 V BD900 IE= 0, VCE = - 50 V BD902 IEBO Emitter Cutoff Current V EB= -5 V, IC= 0 BD896 - - -2 mA BD898 BD900 BD902 VCEO Collector-Emitter Breakdown Voltage (*) IC= -100 mA, IB= 0 BD896 -45 - - V BD898 -60 - - BD900 -80 - - BD902 -100 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -3 A, IB= -12 mA BD896 - - -2.5 V BD898 BD900 BD902

BD896 – BD898 – BD900 – BD902 25/09/2012 COMSET SEMICONDUCTORS 3 | 4 SEMICONDUCTORS TC=25°C unless otherwise noted Symbol Ratings Min Typ Max Unit VBE(on) Base-Emitter Voltage (*) IC= -3 A, VCE= -3 V BD896 - - -2.5 V BD898 BD900 BD902 hFE DC Current Gain (*) VCE= -3.0 V IC= -3 A BD896 750 - - - BD898 BD900 BD902 VECF C-E Diode Forward Voltage IE= -8 A BD896 - - -3.5 V BD898 BD900 BD902 SWITCHING TIMES Symbol Ratings Test Condition(s) Min Typ Max Unit ton turn-on time IC= -3 A, VBE(off) = 3.5 V IBon = -IBoff = -12 mA, RL = 10 Ω - 1 - µs toff turn-off time - 5 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance Junction To Case 1.79 °C/W RthJ-A Thermal Resistance Junction To Free Air 62.5 °C/W

BD896 – BD898 – BD900 – BD902 25/09/2012 COMSET SEMICONDUCTORS 4 | 4 SEMICONDUCTORS MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. Max. A 9,90 10,30 B 15,65 15,90 C 13,20 13,40 D 6,45 6,65 E 4,30 4,50 F 2,70 3,15 G 2,60 3,00 H 15,75 17.15 L 1,15 1,40 M 3,50 3,70 N - 1,37 P 0,46 0,55 R 2,50 2,70 S 4,98 5,08 T 2.49 2.54 U 0,70 0,90 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector