BD810 SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD810

DESCRIPTION

  • With TO-220C package
  • Complement to type BD809
  • DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc

APPLICATIONS

  • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION

1 Emitter

2 Collector;connected to

3 Base

Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -6 A PD Total power dissipation T C=25 90 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.39 /W

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD810 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-3 A;IB=-0.3 A -1.1 V VBE Base-emitter voltage I C=-4A ; VCE=-2V -1.6 V ICBO Collector cut-off current V CB=-80V; IE=0 -1.0 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -2.0 mA hFE-1 DC current gain I C=-2A ; VCE=-2V 30 hFE-2 DC current gain I C=-4A ; VCE=-2V 15 fT Transition frequency I C=-1A ; VCE=-10V;f=1.0MHz 1.5 MHz

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD810 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)