BD809 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD809
DESCRIPTION
- ·With TO-220C package
- Complement to type BD810
- DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 6 A PD Total power dissipation T C=25 90 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.39 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD809 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A; IB=0 80 V VCEsat Collector-emitter saturation voltage I C=3 A;IB=0.3 A 1.1 V VBE Base-emitter voltage I C=4A ; VCE=2V 1.6 V ICBO Collector cut-off current V CB=80V; IE=0 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 2.0 mA hFE-1 DC current gain I C=2A ; VCE=2V 30 hFE-2 DC current gain I C=4A ; VCE=2V 15 fT Transition frequency I C=1A ; VCE=10V;f=1.0MHz 1.5 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD809 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)