BD746 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C
DESCRIPTION
- With TO-3PN package
- Complement to type BD745/A/B/C
- High current capability
- High power dissipation
APPLICATIONS
- For use in power linear and switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD746 -50 BD746A -70 BD746B -90 VCBO Collector-base voltage BD746C Open emitter -110 V BD746 -45 BD746A -60 BD746B -80 VCEO Collector-emitter voltage BD746C Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -20 A ICM Collector current-peak -25 A IB Base current -7 A TC=25 115 PC Collector power dissipation Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT BD746 -45 BD746A -60 BD746B -80 V(BR)CEO Collector-emitter breakdown voltage BD746C IC=-30mA; IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage I C=-5 A;IB=-0.5 A -1.0 V VCEsat-2 Collector-emitter saturation voltage I C=-20 A;IB=-5 A -3.0 V VBE -1 Base-emitter on voltage I C=-5A ; VCE=-4V -1.0 V VBE -2 Base-emitter on voltage I C=-20A ; VCE=-4V -3.0 V BD746/A V CE=-30V; IB=0 ICEO Collector cut-off current BD746B/C V CE=-60V; IB=0 -0.1 mA BD746 VCE=-50V; VBE=0 TC=125 -0.1 -5.0 BD746A VCE=-70V; VBE=0 TC=125 -0.1 -5.0 BD746B VCE=-90V; VBE=0 TC=125 -0.1 -5.0 ICBO Collector cut-off current BD746C VCE=-110V; VBE=0 TC=125 -0.1 -5.0 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.5 mA hFE-1 DC current gain I C=-1A ; VCE=-4V 40 hFE-2 DC current gain I C=-5A ; VCE=-4V 20 150 hFE-3 DC current gain I C=-20A ; VCE=-4V 5 Switching times resistive load td Delay time 0.02 µs tr Rise time 0.12 µs ts Storage time 0.6 µs tf Fall time IC=-5 A;IB1=-IB2=-0.5 A VBE(off)=4.2V; RL=6A tp=20µs 0.3 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.1 /W
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD746/A/B/C PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)