BD745 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C DESCRIPTION ·
- With TO-3PN package
- Complement to type BD746/A/B/C
- High current capability
- High power dissipation
APPLICATIONS
- For use in power linear and switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD745 50 BD745A 70 BD745B 90 VCBO Collector-base voltage BD745C Open emitter 110 V BD745 45 BD745A 60 BD745B 80 VCEO Collector-emitter voltage BD745C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A ICM Collector current-peak 25 A IB Base current 7 A TC=25 115 PC Collector power dissipation Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT BD745 45 BD745A 60 BD745B 80 V(BR)CEO Collector-emitter breakdown voltage BD745C IC=30mA; IB=0 100 V VCEsat-1 Collector-emitter saturation voltage I C=5 A;IB=0.5 A 1.0 V VCEsat-2 Collector-emitter saturation voltage I C=20 A;IB=5 A 3.0 V VBE -1 Base-emitter on voltage I C=5A ; VCE=4V 1.0 V VBE -2 Base-emitter on voltage I C=20A ; VCE=4V 3.0 V BD745/A V CE=30V; IB=0 ICEO Collector cut-off current BD745B/C V CE=60V; IB=0 0.1 mA BD745 VCE=50V; VBE=0 TC=125 0.1 5.0 BD745A VCE=70V; VBE=0 TC=125 0.1 5.0 BD745B VCE=90V; VBE=0 TC=125 0.1 5.0 ICBO Collector cut-off current BD745C VCE=110V; VBE=0 TC=125 0.1 5.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.5 mA hFE-1 DC current gain I C=1A ; VCE=4V 40 hFE-2 DC current gain I C=5A ; VCE=4V 20 150 hFE-3 DC current gain I C=20A ; VCE=4V 5 Switching times resistive load td Delay time 0.02 µs tr Rise time 0.35 µs ts Storage time 0.5 µs tf Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6A tp=20µs 0.4 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.1 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD745/A/B/C PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)