BD743 COMSET | Alldatasheet

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BD743 – A – B – C 25/09/2012 COMSET SEMICONDUCTORS 1 | 4 SEMICONDUCTORS SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE=0) BD743 50 V BD743A 70 BD743B 900 BD743C 110 VCEO Collector-Emitter Voltage (IB=0) BD743 45 V BD743A 60 BD743B 80 BD743C 100 VEBO Emitter-Base Voltage (IC=0) BD743

5 V BD743A

15 A BD743A

ICM Collector Peak Current BD743

20 A BD743A

5 A BD743A

PT Power Dissipation TC = 25°C 90 W TA = 25°C 2 TJ Junction Temperature 150 °C Ts Storage Temperature range -65 to +150

BD743 – A – B – C 25/09/2012 COMSET SEMICONDUCTORS 2 | 4 SEMICONDUCTORS THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-MB Junction To Case Thermal Resistance 1.4 °C/W RthJ-A Junction To Free Air Thermal Resistance 62.5 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VBE= 0 VCB = 50 V TC= 25°C BD743 - - 0.1 mA VBE= 0 VCB = 70 V BD743A VBE= 0 VCB = 90 V BD743B VBE= 0 VCB = 100 V BD743C VBE= 0 VCB = 50 V TC= 125°C BD743 - - 5 mA VBE= 0 VCB = 70 V BD743A VBE= 0 VCB = 90 V BD743B VBE= 0 VCB = 100 V BD743C ICEO Collector Cutoff Current I B= 0 VCE = 30 V BD743 - - 0.1 mA BD743A IB= 0 VCE = 60 V BD743B BD743C IEBO Emitter Cutoff Current V EB= 5 V, IC= 0 BD743 - - 0.5 mA BD743A BD743B BD743C VCEO Collector-Emitter Breakdown Voltage (*) IC= 30 mA, IB= 0 BD743 45 - - V BD743A 60 - - BD743B 80 - - BD743C 100 - -

BD743 – A – B – C 25/09/2012 COMSET SEMICONDUCTORS 3 | 4 SEMICONDUCTORS TC=25°C unless otherwise noted Symbol Ratings Value Unit VCE(SAT) Collector-Emitter saturation Voltage (*) I C= 5 A, IB= 500 mA BD743 - - 1 V BD743A BD743B BD743C IC= 15 A, IB=5 A BD743 - - 3 BD743A BD743B BD743C VBE(on) Base-Emitter Voltage (*) IC= 5 A, VCE= 4 V BD743 - - 1 V BD743A BD743B BD743C IC= 15 A, VCE= 4 V BD743 - - 3 V BD743A BD743B BD743C hFE DC Current Gain (*) IC= 1 A, VCE= 4 V BD743 40 - - BD743A BD743B BD743C IC= 5 A, VCE= 4 V BD743 20 - 150 BD743A BD743B BD743C IC= 15 A, VCE= 4 V BD743 5 - - BD743A BD743B BD743C SWITCHING TIMES Symbol Ratings Test Condition(s) Value Unit Min Typ Max td Delay time IC= 5 A, Vbe= -4.2 V IB(on) = -IB(off) = 0.5 A RL = 6 Ω, tp = 20µs - 20 - ns tr Rise time - 350 - ts Storage time - 500 - tf Fall time - 400 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

BD743 – A – B – C 25/09/2012 COMSET SEMICONDUCTORS 4 | 4 SEMICONDUCTORS MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. Max. A 9,90 10,30 B 15,65 15,90 C 13,20 13,40 D 6,45 6,65 E 4,30 4,50 F 2,70 3,15 G 2,60 3,00 H 15,75 17.15 L 1,15 1,40 M 3,50 3,70 N - 1,37 P 0,46 0,55 R 2,50 2,70 S 4,98 5,08 T 2.49 2.54 U 0,70 0,90 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Package Collector