BD707 SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711

DESCRIPTION

  • With TO-220C package
  • The BD707 and BD711are respectively complement to type BD708 and BD712

APPLICATIONS

  • Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD707 60 BD709 80 VCBO Collector-base voltage BD711 Open emitter 100 BD707 60 BD709 80 VCEO Collector-emitter voltage BD711 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 12 A ICM Collector current-Pulse 18 A IB Base current 5 A PT Total dissipation T C=25 75 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 /W

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD707 60 BD709 80 VCEO(SUS) Collector-emitter sustaining voltage BD711 IC=0.1A, IB=0 100 V VCEsat Collector-emitter saturation voltage I C=4A ,IB=0.4A 1.0 V VBE Base-emitter voltage I C=4A , VCE=4V 1.5 V BD707 VCB=60V, IE=0 TC=150 0.1 1.0 BD709 VCB=80V, IE=0 TC=150 0.1

1.0 ICBO Collector cut-off current

BD711 VCB=100V, IE=0 TC=150 0.1 1.0 mA BD707 V CE=30V, IB=0 BD709 V CE=40V, IB=0 ICEO Collector cut-off current BD711 V CE=50V, IB=0 0.1 mA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 mA hFE-1 DC current gain I C=0.5A ; VCE=2V 40 120 400 hFE-2 DC current gain only for BD707/709 IC=2A ; VCE=2V 30 hFE-3 DC current gain I C=4A ; VCE=2V 15 150 BD707 5 10 BD709 8 hFE-4 DC current gain BD711 IC=10A ; VCE=4V fT Transition frequency I C=0.3A;VCE=3V; 3 MHz

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 PACKAGE OUTLINE Fig.2 Outline dimensions