BD708 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712
DESCRIPTION
- With TO-220C package
- Complement to type BD707/709/711
APPLICATIONS
- Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD708 -60 BD710 -80 VCBO Collector-base voltage BD712 Open emitter -100 V BD708 -60 BD710 -80 VCEO Collector-emitter voltage BD712 Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -12 A ICM Collector current-Pulse -18 A IB Base current -5 A PT Total dissipation T C=25 75 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.67 /W
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD708 -60 BD710 -80 VCEO(SUS) Collector-emitter sustaining voltage BD712 IC=-0.1A, IB=0 -100 V VCEsat Collector-emitter saturation voltage I C=-4A ,IB=-0.4A -1.0 V VBE Base-emitter voltage I C=-4A , VCE=-4V -1.5 V BD708 VCB=-60V, IE=0 TC=150 -0.1 -1.0 BD710 VCB=-80V, IE=0 TC=150 -0.1 -1.0 ICBO Collector cut-off current BD712 VCB=-100V, IE=0 TC=150 -0.1 -1.0 mA BD708 V CE=-30V, IB=0 BD710 V CE=-40V, IB=0 ICEO Collector cut-off current BD712 V CE=-50V, IB=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 mA hFE-1 DC current gain I C=-0.5A ; VCE=-2V 40 120 400 hFE-2 DC current gain only for BD708 IC=-2A ; VCE=-2V 30 hFE-3 DC current gain I C=-4A ; VCE=-4V 15 150 BD708 5 10 BD710 8 hFE-4 DC current gain BD712 IC=-10A ; VCE=-4V fT Transition frequency I C=-0.3A;VCE=-3V; 3 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 PACKAGE OUTLINE Fig.2 Outline dimensions