BD644 COMSET | Alldatasheet

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Technical content

-VCBO Collector-Base Voltage BD652 120 V BD644 45 BD646 60 BD648 80 BD650 100 -VCEO Collector-Emitter Voltage BD652 120 V BD644 BD646 BD648 BD650 -VEBO Emitter-Base Voltage BD652 5 V BD644 BD646 BD648 BD650 -IC Collector Current BD652 8 A BD644 BD646 BD648 BD650 -ICM Collector Peak Current BD652 12 A SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651

-IB Base Current BD652 150 mA BD644 BD646 BD648 BD650 PT Power Dissipation @ T mb < 25° BD652

62.5 Watts

Ts Storage Temperature range BD652 -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings Value Unit BD644 BD646 BD648 BD650 RthJ-MB From junction to mounting base BD652

2 K/W

RthJ-A From junction to ambient in free air BD652

70 K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BD644 BD646 BD648 BD650 -IE=0,-VCB =-VCEOMAX BD652 - - 0.1 mA BD644 BD646 BD648 BD650 -ICBO Collector Cutoff Current -IE=0,-VCB =1/2 -VCBOMAX, TJ=150°C BD652 - - 1 mA BD644 BD646 BD648 BD650 -ICEO Collector Cutoff Current -IE=0, -VCE =1/2 -VCEOMAX BD652 - - 0.2 mA BD644 BD646 BD648 BD650 -IEBO Emitter Cutoff Current -VEB=5 V, -IC=0 BD652 - - 5.0 mA BD644 - - 2 BD646 - - - BD648 - - - BD650 - - - -IC=4 A, -IB=16 mA BD652 - - - BD644 - - - BD646 - - 2 BD648 - - 2 BD650 - - 2 -IC=3 A, -IB=12 mA BD652 - - 2 BD644 - - 2.5 BD646 - - 2.5 BD648 - - 2.5 BD650 - - 2.5 -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=5 A, -IB=50 mA BD652 - - 2.5 V BD644 BD646 BD648 BD650 -VBE(SAT) Base-Emitter Saturation Voltage (*) -IC=12 A, -IB=50 mA BD652 - - 3 V

BD644 - - 2.5 BD646 - - - BD648 - - - BD650 - - - -IC=4 A, -VCE=3 V BD652 - - - BD644 - - - BD646 - - 2.5 BD648 - - 2.5 BD650 - - 2.5 -VBE Base-Emitter Voltage (*) -IC=3 A, -VCE=3 V BD652 - - 2.5 V BD644 - - BD646 - - BD648 - - BD650 - - -VCE=3.0 V, -IC=0.5 A BD652 - 2700 BD644 750 - - BD646 - - - BD648 - - - BD650 - - - -VCE=3.0 V, -IC=4 A BD652 - - - BD644 - - - BD646 - - BD648 - - BD650 - - -VCE=3.0 V, -IC=3 A BD652 750 - - BD644 - - BD646 - - BD648 - - BD650 - - hFE DC Current Gain (*) -VCE=3.0 V, -IC=8 A BD652 - 200 BD644 10 - - BD646 - - - BD648 - - - BD650 - - - -VCE=3.0 V, -IC=4 A, f=1MHz BD652 - - - BD644 - - - BD646 10 - - BD648 10 - - BD650 10 - - hfe Small Signal Current Gain -VCE=3.0 V, -IC=3 A, f=1MHz BD652 10 - - ton turn-on time - 1 - µs toff turn-off time -IC=3 A, -IBon= IBoff=12 mA All types - 5 - µs (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

MECHANICAL DATA CASE TO-220 DIMENSIONS mm inches A 9,86 0,39 B 15,73 0,62 C 13,37 0,52 D 6,67 0,26 E 4,44 0,17 F 4,21 0,16 G 2,99 0,11 H 17,21 0,68 L 1,29 0,05 M 3,6 0,14 N 1,36 0,05 P 0,46 0,02 R 2,1 0,08 S 5 0,19 T 2,51 0,098 U 0,79 0,03 Pin 1 : Anode 1 Pin 2 : Anode 2 Pin 3 : Gate