BD643 ISC | Alldatasheet
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors BD643
DESCRIPTION
- With TO-220C package
- Complement to type BD644
- DARLINGTON
APPLICATIONS
- For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 150 A PC Collector power dissipation TC=25℃ 62.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.5 ℃/W
Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors BD643 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=0.1A, IB=0 45 V V(BR)CBO Collector-base breakdown voltage I C=5mA, IE=0 45 V V(BR)EBO Emitter-base breakdown voltage I E=2mA, IC=0 5 V VCEsat Collector-emitter saturation voltage I C=3A ,IB=12mA 2.0 V VBE Base-emitter voltage I C=3A , VCE=3V 2.5 V ICBO Collector cut-off current V CB=VCBMax; IE=02 0.2 mA ICEO Collector cut-off current V CE=1/2 VCEMax; IB=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 5 mA hFE-1 DC current gain I C=0.5A ; VCE=3V 1500 hFE-2 DC current gain I C=3A ; VCE=3V 750 hFE-3 DC current gain I C=6A ; VCE=3V 750 VF Diode forward voltage I F=3A 1.8 V fT Transition frequency I C=3A;VCE=3V;f=1MHz 7 MHz
Inchange Semiconductor Product Specification Silicon NPN Dalington Power Transistors BD643 PACKAGE OUTLINE Fig.2 Outline dimensions