BD643_12 COMSET | Alldatasheet

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BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 1 | 5 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage BD643 60 V BD645 80 BD647 100 BD649 120 BD651 140 VCEO Collector-Emitter Voltage BD643 45 V BD645 60 BD647 80 BD649 100 BD651 120 VEBO Emitter-Base Voltage BD643 5 V BD645 BD647 BD649 BD651 IC Collector Current BD643 8 A BD645 BD647 BD649 BD651 ICM Collector Peak Current BD643 12 A BD645 BD647 BD649 BD651

BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 2 | 5 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit IB Base Current BD643 300 mA BD645 BD647 BD649 BD651 PT Power Dissipation @ T mb < 25° BD643

62.5 Watts

Ts Storage Temperature range BD643 -65 to +150 BD645 BD647 BD649 BD651 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-MB From junction to mounting base 2 K/W RthJ-A From junction to ambient in free air 62.5 K/W

BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 3 | 5 SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE=0,VCB =VCEOMax BD643 - - 0.2 mA BD645 BD647 BD649 BD651 IE=0,VCB =1/2 VCBOMax TJ=150°C BD643 - - 2 mA BD645 BD647 BD649 BD651 ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMax BD643 - - 0.5 mA BD645 BD647 BD649 BD651 IEBO Emitter Cutoff Current V EB=5 V, IC=0 BD643 - - 5.0 mA BD645 BD647 BD649 BD651 VCEO Collector-Emitter Breakdown Voltage IC=30 mA, IB= 0 BD643 45 - - V BD645 60 - - BD647 80 - - BD649 100 - - BD651 120 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=4 A, IB=16 mA BD643 - - 2 V IC=3 A, IB=12 mA BD645 - - 2 BD647 BD649 BD651 IC=5 A, IB=50 mA BD643 - - 2.5 BD645 BD647 BD649 BD651 VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA BD643 - - 3 V BD645 BD647 BD649 BD651

BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 4 | 5 SEMICONDUCTORS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VBE Base-Emitter Voltage (*) IC=4 A, VCE=3 V BD643 - - 2.5 V IC=3 A, VCE=3 V BD645 - - 2.5 BD647 BD649 BD651 hFE DC Current Gain (*) VCE=3.0 V, IC=0.5 A BD643 - 1900 - BD645 BD647 BD649 BD651 VCE=3.0 V, IC=4 A BD643 750 - - VCE=3.0 V, IC=3 A BD645 750 - - BD647 BD649 BD651 VCE=3.0 V, IC=8 A BD643 - 1800 - BD645 BD647 BD649 BD651 hfe Small Signal Current Gain VCE=3.0 V, IC=4 A f=1MHz BD643 10 - - - VCE=3.0 V, IC=3 A f=1MHz BD645 10 - - BD647 10 - - BD649 10 - - BD651 10 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

BD643 – 645 – 647 – 649 – 651 17/10/2012 COMSET SEMICONDUCTORS 5 | 5 SEMICONDUCTORS MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. Max. A 9,90 10,30 B 15,65 15,90 C 13,20 13,40 D 6,45 6,65 E 4,30 4,50 F 2,70 3,15 G 2,60 3,00 H 15,75 17.15 L 1,15 1,40 M 3,50 3,70 N - 1,37 P 0,46 0,55 R 2,50 2,70 S 4,98 5,08 T 2.49 2.54 U 0,70 0,90 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Case : Collector