BD433 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437
DESCRIPTION
- With TO-126 package
- Complement to type BD434/436/438
APPLICATIONS
- For medium power linear and switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD433 22 BD435 32 VCBO Collector-base voltage BD437 Open emitter V BD433 22 BD435 32 VCEO Collector-emitter voltage BD437 Open base V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 4 A ICM Collector current-Peak 7 A IB Base current 1 A PC Collector power dissipation T C=25 36 W Tj Junction temperature 150 Tstg Storage temperature -65~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD433/435 0.5 VCEsat Collector-emitter saturation voltage BD437 IC=2A; IB=0.2A 0.2 0.6 V BD433/435 1.1 VBE Base-emitter on voltage BD437 IC=2A ; VCE=1V 1.2 V BD433 22 BD435 32 VCEO(SUS) Collector-emitter sustaining voltage BD437 IC=0.1A; IB=0 V BD433 V CB=22V; IE=0 BD435 V CB=32V; IE=0 ICES Collector cut-off current BD437 V CB=45V; IE=0 100 µA BD433 V CE=22V; VBE=0 BD435 V CE=32V; VBE=0 ICES Collector cut-off current BD437 V CE=45V; VBE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 1 mA BD433/435 40 hFE-1 DC current gain BD437 IC=10mA ; VCE=5V 130 hFE-2 DC current gain I C=0.5A ; VCE=1V 85 140 BD433/435 50 hFE-3 DC current gain BD437 IC=2A ; VCE=1V fT Transition frequency I C=250mA; VCE=1V 3 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 PACKAGE OUTLINE Fig.2 Outline dimensions