BD433 COMSET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
NPN BD433 – BD435 – BD437 25/09/2012 COMSET SEMICONDUCTORS 1 | 3 SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage (IE= 0) BD433 22 V BD435 32 BD437 45 VCEO Collector-Emitter Voltage (IB= 0) BD433 22 V BD435 32 BD437 45 VEBO Emitter-Base Voltage (Ic= 0) 5 V IC Collector Current 4 A ICM Collector Current Peak 7 IB Base Current 1 A PC Total power Dissipation T C = 25°C 36 W TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-c Thermal Resistance, Junction-Case 3.5 °C/W RthJ-a Thermal Resistance, Junction-ambient in free air 100 °C/W
NPN BD433 – BD435 – BD437 25/09/2012 COMSET SEMICONDUCTORS 2 | 3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector cut-off current IE= 0, VCB= 22 V BD433 - - 100 µA IE= 0, VCB= 32 V BD435 IE= 0, VCB= 45 V BD437 ICES Collector cut-off current VBE= 0, VCE= 22 V BD433 - - 100 VBE= 0, VCE= 32 V BD435 VBE= 0, VCE= 45 V BD437 IEBO Emitter cut-offcurrent IC= 0 VEB= 5 V BD433 - - 1 mA BD435 BD437 VCEO(SUS) Collector-Emitter sustaning Voltage (*) IB= 0 IC= 100 mA BD433 22 - - V BD435 32 - - BD437 45 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 2 A IB= 200 mA BD433 - - 0.5 V BD435 BD437 0.6 VBE Base-Emitter Voltage(*) IC= 2 A VCE= 1 V BD433 - - 1.1 V BD435 BD437 1.2 hFE DC Current Gain (*) IC= 10 mA VCE= 5 V BD433 40 - 130 BD435 BD437 30 - 130 IC= 500 mA VCE= 1 V BD433 85 - 140 BD435 BD437 IC= 2 A VCE= 1 V BD433 50 - - BD435 BD437 40 - - fT Transition frequency IC= 250 mA VCE= 1 V BD433 3 - - MHz BD435 BD437 1. Measured under pulse conditions :tP <300µs, δ <1.5
NPN BD433 – BD435 – BD437 25/09/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-126 Revised August 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does Comset Semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. Comset Semiconductors’ produ cts are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS min max A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 typ. F 0.49 0.75 G 4.4 typ. L 15.7 typ. M 1.27 typ. N 3.75 typ. P 3.0 3.2 S 2.54 typ. Pin 1 : Emitter Pin 2 : Collector Pin 3 : Base