BD410 COMSET | Alldatasheet
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25/09/2012 COMSET SEMICONDUCTORS 1/3 05/11/2012 SEMICONDUCTORS NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICM Collector Peak Current 1.5 A PT Total Power Dissipation Ta =25°C 1.25 W Tc =25°C 20 tJ Junction Temperature -55 to +125 °C ts Storage Temperature range -55 to +125 tL Lead Temperature 1.6 mm From Case For 10 Secondes 260
25/09/2012 COMSET SEMICONDUCTORS 2/3 05/11/2012 SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO Collector-Emitter Breakdown Voltage (*) IC= 10 mA, IB= 0 325 - - V VCBO Collector-Base Breakdown Voltage IC= 0.5 mA, IE= 0 500 - - V VEBO Collector-Base Breakdown Voltage IE= 50 µA, IC= 0 5 - - V ICES Collector Cutoff Current V CE = 300 V, IB= 0 - - 100 µA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 100 mA, IB= 10 mA - - 0.5 V VBE Base-Emitter Voltage (*) I C= 100 mA, IB= 10 mA - - 1.5 V hFE DC Current Gain (*) IC= 5 mA, VCE= 10 V 25 - - - IC= 50 mA, VCE= 10 V 30 - 240 IC= 100 mA, VCE= 10 V 20 - - SWITCHING TIMES. Symbol Ratings Test Condition(s) Min Typ Mx Unit Cobo Output Capacitance I E= 0, VCB= 10 V, f= 1 MHz - 5.5 - pF Cibo Input Capacitance I E= 0, VCB= 0.5 V, f= 1 MHz - 90 - (*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2%
25/09/2012 COMSET SEMICONDUCTORS 3/3 05/11/2012 SEMICONDUCTORS MECHANICAL DATA CASE TO-126 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS min max A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 typ. F 0.49 0.75 G 4.4 typ. L 15.7 typ. M 1.27 typ. N 3.75 typ. P 3.0 3.2 S 2.54 typ. Pin 1 : Emitter Pin 2 : Collector Pin 3 : Base