BD312 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312
DESCRIPTION
- With TO-3 package
- High DC current gain
- Excellent safe operating area
- Complement to type BD311
APPLICATIONS
- Designed for power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current(peak) -20 A IB Base current -4 A PT Total power dissipation T C=25 115 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.52 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-0.2A ; IB=0 -60 V VCEsat Collector-emitter saturation voltage I C=-5A ;IB=-0.5A -1.0 V VBEsat Base-emitter saturation voltage I C=-5A ;IB=-0.5A -1.8 V VBE Base-emitter on voltage I C=-5A ;VCE=-4V -1.5 V ICBO Collector cut-off current V CB=rated;IE=0 -1.0 mA IEBO Emitter cut-off current V EB=-7V; IC=0 -1.0 mA hFE-1 DC current gain I C=-5A ; VCE=-4V 25 hFE-2 DC current gain I C=-10A ; VCE=-4V 5 fT Transition frequency I C=-0.5A ; VCE=-10V,f=1MHz 4 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD312 PACKAGE OUTLINE Fig.2 Outline dimensions