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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT
720 SCHOTTKY BARRIER DIODE
FEATURES
High Switching Speed Low Forward Voltage Guard Ring Protected
APPLICATIONS
Voltage Clamping Protection Circuits MARKING: L61 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC B locking Voltage 40 V IO Con tinuous Forward Current 500 mA IFSM No n-repetitive peak Forward Surge Current @ t=8.3ms 2 A PD Powe r Dissipation 350 mW RθJA Th ermal Resistance from Junction to Ambient 286 ℃/W Tj Juncti on Temperature 125 ℃ Tstg St orage Temperature -55~+150 ℃ ELEC TRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reve rse voltage V(BR) I R=100μA 40 V Reve rse current IR V R=35V 100 μA Forw ard voltage VF I F=500mA 550 mV SOT- 1 C,Oct,2015www.cj-elec.com
0.1 100 1000 02 5 5 0 7 5 100 125 100 200 300 400 0 5 10 15 20 100 Forwa rd Characteristics FORWARD CURRENT IF (mA) FORWARD VOLT AGE VF (mV) Ta =25℃ Ta =100℃ 500 Ta=100℃ Ta=25℃ Reverse C haracteristics REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) AMBIENT TEM PERATURE Ta ( )℃ Power D erating Curve CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Capacit ance Characteristics Ta=25℃ f=1MHz Typical Characteristics www.cj-elec.com 2 C,Oct,2015
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Lay out www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2015