BAS70 YEASHIN | Alldatasheet
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http://www.yeashin.com 1 REV.03 20120305 BAS70/A/C/S SCHOTTKY DIODE
FEATURES
‧Low Turn-on voltage ‧Fast switching ‧Ultra-small surface mount package ‧Also available in lead free version ‧ High temperature soldering : 260 O C / 10 seconds at terminals ‧ Pb free product at available : 99% Sn above meet RoHS environment substance directive request MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VR DC Voltage 70 V IF Forward Continuous Current 70 mA Pd Power dissipation 200 mW TJ, Tstg Junction Operating and Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified ） Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V (BR) R I R = 10µA 70 V Reverse voltage leakage current I R V R =50V 100 nA Forward voltage V F I F =1mA I F =15mA 410 1000 mV Diode capacitance C D V R =0V f=1MHz 2 pF Reveres recovery time t rr I F R =10mA,I rr =0.1 x I R R L =100Ω 5 nS SOT23 Unit:inch(mm) BAS70 Marking: 73 BAS70S Marking: 74 BAS70C Marking: 75 BAS70A Marking: 76 Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 6° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP H
http://www.yeashin.com 2 REV.03 20120305 BAS70/A/C/S DEVICE CHARACTERISTICS 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 Fig.3 Typical Capacitance. Total Capacitance: CT(pF) REVERSE VOLTAGE: V R (V) f=1MHz Tamb=25 O C Fig.4- , C O 240 200 160 120 Pd,FPower Dissipation(mW) T ,Ambient Temperature A 150 1751251007525 50 Power Derating Curve,Total Package f=1.0MHz
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