ES1A YEASHIN | Alldatasheet

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Technical content

SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

FEATURES

  • For surface mounted applications
  • Low profile package
  • Built-in strain relief
  • Easy pick and place
  • Superfast recovery times for high efficiency
  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
  • Glass passivated junction
  • High temperature soldering: 260 / 10 seconds at terminals High temperature soldering : 260• OC / 10 seconds at terminals Pb free produ• ct at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA
  • Case: JEDEC DO-214AC molded plastic
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Indicated by cathode band
  • Standard packaging: 12mm tape (EIA-481)
  • Weight: 0.002 ounce, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave 60Hz resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rect ified Current , at TL=120 Volts

1.0 Amps

Peak For ward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method) IFSM 30.0 Amps Maximum Instantaneous Forward Voltage at 1.0A VF 0.95 1.25 1.7 Volts Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=100 5.0 100 uA Maximum Reverse Recovery Time (Note 1) 35.0 nS Typical Junction capacitance (Note 2) 10.0 pF Typical Thermal Resistance (Note 3) 35 /W Operating and Storage Temperature Range -55to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas SMA/DO-214AC Unit:inch(mm) .062(1.60) .047(1.20) .012(.305) .006(.152) .008(.203) .002(.051) .060(1.52) .030(0.76) .181(4.60) .157(4.00) .208(5.28) .188(4.80) .114(2.90) .098(2.50) .096(2.44) .078(2.00) OC OC IR TRR Cj TSTG R θJA DATA SHEET ES1A~ES1JSEMICONDUCTOR http://www.yeashin.com 1 REV.02 20110725

RATING AND CHARACTERISTIC CURVES ES1A THRU ES1J NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms t rr +0.5A -0.25 -1.0 SET TIME 1cm BASE FOR 50 ns/cm 2.0 1.0 25 50 75 100 125 150 175 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON PAD AREAS LEAD TEMPERA TURE, Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 1000 100 0.1 20 40 60 80 100 120 TJ = 25 TJ = 125 TJ = 75 % OF PIV. VOLTS 0.1 0.01 0.001 ES1E ES1A ES1J TJ = 25 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 1 2 5 10 20 50 100 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD NUMBER OF CYCLES AT 60Hz 8.0 6.0 4.0 2.0 .1 1 10 100 TJ = 25 f = 1.0MHz Vsi g = 50mVp-p REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT Fig. 6-TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT , MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES JUNCTION CAPACITANCE, pF http://www.yeashin.com 2 REV.02 20110725