ER1A YEASHIN | Alldatasheet

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Technical content

SURFACE MOUNT SUPERFAS T RECTIFI ER VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

FEATURES

  • For surface mounted applications
  • Low profile package
  • Built-in strain relief
  • Easy pick and place
  • Superfast recovery times for high efficiency
  • Plastic package has Und erwriters Laboratory Flammability Classification 94V-O
  • Glass pa ssivated junction
  • High temperature soldering:

260 J /10 seconds at terminals

High temperature soldering : 260• / 10 seconds at terminals Pb free prod• uct at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA

  • Case: JEDEC D O-214AA molded plastic
  • Terminals: Solder plated, solderable per
  • MIL-STD-750 , Method 2026
  • Polarity: Indicated by cathode band
  • Standard packaging: 12mm tape (EIA-481)
  • Weight: 0.003 ounce, 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, re sistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS ER1A ER1B ER1C ER1D ER1E ER1G ER1J UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current , at TL=100 I(AV) 1.0 Amps Peak Forward Surge Current 8.3ms single half sine wave super imposed on rated load(JEDEC method) IFSM 30.0 Amps Maximum Instantaneous Forward Voltage at 1.0A VF 0.95 1.25 1.7 Volts Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=100 IR 5.0 100 uA Maximum Reverse Recovery Time (Note 1) TRR 35.0 nS Typical Junction capacitance (Note 2) CJ 10.0 pF Typical Thermal Resistance (Note 3) 34 /W Operating and Storage Temperature Range TJ,TSTG -55to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A , IR=1 .0A, Irr=0.25A 2. Measured at 1 M Hz and Appl ied reverse voltage of 4.0 volts 3. 8 .0mm2 (.013mm thick) la nd areas .083(2.11) .075(1.91) .012(.305) .006(.152) .012(.31) .006(.15) .008(.203) .002(.051) .050(1.27) .030(0.76) SMB/DO-214AA Unit:inch(mm) .155(3.94) .130(3.30) .185(4.70) .160(4.06) .096(2.44) .083(2.13) .220(5.59) .200(5.08) OC R θJA DATA SHEET ER1A~ER1JSEMICONDUCTOR http://www.yeashin.com 1 REV.02 20110725

RATINGS AND CHARACTERISTIC CURVES NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms trr +0.5A -0.25 -1.0 SET TIME 1cm BASE FOR 50 ns/cm 2.0 1.0 25 50 75 100 125 150 175 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON PAD AREAS LEAD TEMPERA TURE, Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 1000 100 0.1 20 40 60 80 100 120 TJ = 25 TJ = 125 TJ = 75 % OF PIV. VOLTS 0.1 0.01 0.001 ER1E ER1A ER1J TJ = 25 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 1 2 5 10 20 50 100 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD NUMBER OF CYCLES AT 60Hz 8.0 6.0 4.0 2.0 .1 1 10 100 TJ = 25 f = 1.0MHz Vsig = 50mVp-p REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT Fig. 6-TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT , AMPERES AVERAGE FORWARD CURRENT AMPERES JUNCTION CAPACITANCE, pF ER1A~ER1J http://www.yeashin.com 2 REV.02 20110725