BAS70 HTSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
FEATURES
z Low Turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76 MAXIMUM RATINGS @T A =25 Symbol Parameter Value Units V R DC Voltage 70 V I F Forward Continuous Current 70 mA P D Power dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V (BR) R I R = 10µA 70 V Reverse voltage leakage current I R V R =50V 120 nA Forward voltage V F I F =1mA I F =15mA 410 1000 mV Diode capacitance C D V R =0V f=1MHz 2 pF Reveres recovery time t rr I F R =10mA,I rr =0.1xI R R L =100Ω 5 nS SOT-23 BAS7 0/-04/-05/-06 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu BAS7 0/-04/-05/-06