BAS70 HDSEMI | Alldatasheet
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Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Switching Diodes SOT-23 Plastic-Encapsulate Diodes MARKING:76 MARKING:75 MARKING:74 MARKING: 73 Low turn-on voltage Fast switching Also available in lead free version BAS70 BAS70-06 BAS70-05 BAS70-04 Symbol Parameter Value Unit V R DC Voltage 70 V I F Forward Continuous Current 70 mA P D Power Dissipation 200 mW T J Junction Temperature 125 ℃ T stg Storage Temperature -55~+150 ℃ RθJA Thermal Resistance Junction to Ambient 500 Non-Repetitive Peak Forward Surge Current @ t = 8.3msI FSM 100 mA ℃/W P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max U nit Reverse breakdown voltage V (BR) I R = 10µA 70 V Reverse voltage leakag e current I R V R =50V 100 nA Forward voltage V F I F =1mA I F =15mA 410 1000 mV Diode cap acitance C D V R =0V f=1MHz 2 pF Reveres recovery time t rr I F R =10mA,I rr =0.1xI R R L =100Ω 5 n s BAS70/-04/-05/-06
H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 100 150 200 250 300 0.01 0.1 100 0 1 02 0 3 04 05 06 07 0 0.01 0.1 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a =10 T a =25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Pulsed T a =100 Pulsed Reverse Characteristics T a =25 REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V)
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor