BAS70 TEL | Alldatasheet
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Technical content
1.9 0.95 0.95 2.9 0.4 1. 3 2. 4 1.0 BAS70-04-05-06 SCHOTTKY DIODE
FEATURES
P D: 2 0 0 m W ( T a m b = 2 5℃) Collector current I F: 2 0 0 mA Collector-base voltage V R: 7 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) R I R= 10µA 70 V Reverse voltage leakage current IR V R=50V 100 nA Forward voltage VF IF=1mA IF=15mA 410 1000 mV Diode capacitance CD V R=0V,f=1MHz 2 pF Reveres recovery time trr IF=10mA through IR=10mA to I R=1mA 5 nS U n i t : m m SOT-23