BAS40 YEASHIN | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

z Low forward current z Guard ring protected z Low diode capacitance.

APPLICATIONS

z Ultra high-speed switching z Voltage clamping z Protection circuits. z Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes with an integrated guard ring for stress protection. BAS40C double diode. BAS40A double diode. Anode Anode Anode Cathode BAS40 single diode. BAS40S double diode. Cathode Anode Cathode Cathode/Anode Cathode Cathode Anode Pb-Free Package is Available. Device Marking Shipping

3000 Tape & Reel

ORDERING INFORMATION

SOT–23 (TO–236AB) 1 2 H

http://www.yeashin.com 2 REV.02 20120403 BAS40/A/C/S MAXIMUM RATINGS (T A = 25 Parameter Symbol Min. Max. Unit Conditions Continuous reverse voltage V R 40 V Continuous forward current I F 120 mA Repetitive Peak forward surge current I FSM 120 mA t p <1s;δ<0.5 Non-repetitive peak forward current I FSM 200 mA t p <10ms Storage temperature T stg -65 +150 °C Junction temperature T j 150 °C Operating ambient temperature T amb -65 +150 °C DEVICE MARKING ELECTRICAL CHARACTERISTICS( T A = 25 Parameter Symbol Max. Unit Conditions Forward voltage(Fig.1) V F 400 mV I F =1mA 560 mv I F =10mA 1v I F =40mA Reverse current(Fig.2 note1) I R 1 µΑ V R =30V 10 µAV R =40V Diode capacitance(Fig.4) C d 5 pF f=1MHz;V R Note: 1. Pulse test:t p =300µs;δ=0.02. THERMAL CHARACTERISTICS PARAMETER SYMBOL V ALUE UNIT CONDITIONS Thermal resistance from junction to ambient R th j-a 500 k/w note1 Note 1. Refer to SOT23 or SOT143B standard mounting conditions.

http://www.yeashin.com 3 REV.02 20120403 BAS40/A/C/S DEVICE CHARACTERISTICS Electrical characteristic curves(T A = 25°C) 10- Tamb=150 O C Tamb=25 O C Tamb= O C Tamb=85 O C Fig.1 Forward current as a function of forward voltage; typical values. 10- 0 10 20 30 40 Fig.2 Reverse current as a function of reverse voltage; typical values. 0 10 20 30 40 Fig.4 Diode capacitance as a function of reverse voltage;typical values. 1 10 10 Fig.3 Differential forward resistance as a function of forward current;typical values. Tamb=25 O C Tamb=85 O C Tamb=150 O C f=10KHz FORWARD VOLTAGE: I F(mA) FORWARD VOLTAGE: V F(V) FORWARD VOLTAGE: I R (µA) FORWARD VOLTAGE: V R (V) FORWARD VOLTAGE: r diff(Ω ) FORWARD VOLTAGE: C d(pF) FORWARD VOLTAGE: I F(mA) FORWARD VOLTAGE: V R (V) f=1MHz Tamb=25 O C

http://www.yeashin.com 4 REV.02 20120403 BAS40/A/C/S PACKAGE OUTLINE & DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8