BAS40 HTSEMI | Alldatasheet
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Technical content
FEATURES
z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING ：45 BAS40-04 MARKING ：44 Maximum Ratings @T A =25℃ Parameter Symbol Limits Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage V RRM V RWM V R 40 V Forward continuous Current I FM 200 mA Power Dissipation P D 200 mW Thermal Resistance. Junction to Ambient Air R θJA 625 ℃/W Junction temperature T J 125 ℃ Storage temperature range T STG -65-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V (BR) I R = 10 μ A 40 V Reverse voltage leakage current I R V R =30V 200 nA Forward voltage V F I F =1mA I F =40mA 380 1000 mV Diode capacitance C D V R =0,f=1MHz 5 pF Reverse Recovery time t r r I rr =1mA, I R F =10mA R L =100Ω nS SOT-23 BAS40/-04/-05/-06 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu