BAS40 HDSEMI | Alldatasheet
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Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Switching Diodes SOT-23 Plastic-Encapsulate Diodes MARKING:4 6 MARKING4 5 MARKING:4 4 MARKING: 4 3 BAS40/-04/-05/-06 Low Forward Voltage Fast Switchi BAS40 BAS40-06 BAS40-05 BAS40-04 Parameter Symbol Limit Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage V RRM V RWM V R 40 V Forward continuous current I FM 200 mA Power dissipation P D 200 mW Thermal resistance junction to ambient R θJA 500 ℃/W Junction temperature T J 1 25 ℃ Storage temperature range T STG - 55~+150 ℃ P a r a m e t e r Symbol Test conditions M in Max Unit Reverse breakdown voltage V (BR) I R =10 μ A 40 V Reverse voltage leakage current I R V R =30V 200 nA Forward voltage V F I F =1mA I F =40mA 380 1000 mV Diode capacitance C D V R =0,f=1MHz 5 pF Reverse recovery time t r r I rr =1mA, I R F =10mA R =100Ω ns
H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 01 0 2 0 30 4 0 1E-3 0.01 0.1 100 0.1 100 REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Ta=25 f=1MHz Capacitance Characteristics AMBIENT TEMPERATURE T J ( ) POWER DISSIPATION P D (W) Power Derating Curve Ta=25 Ta=100 REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) Reverse Characteristics Ta=25 Ta=100 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V)
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor