BAS40 HOTTECH | Alldatasheet
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Technical content
Page:P2-P1 Plastic-EncapsulateDiodes GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. SCHOTTKY DIODE FE A TURES
- Low Forward Voltage
- Fast Switching MARKING BAS 40:B 1 BAS 40-06:L 2 BAS 40-05:45 BAS 40-04:C B MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive peak reverse voltage W orking peak reverse voltage DC Blocking V ol t age V RRM V RW M V R 40 V Forw ardcontinuous Current IFM 200 mA Pow er Dissipation PD 200 mW Thermal Resistance. JunctiontoA mbientA ir R θJA 625 /W Junctiontem perature TJ 125 Storage temperature range TSTG -65-125 ElectricalRatings @T A =25 Param eter Sym bol Test conditions M in M ax U nit R everse breakdow n voltage V (BR) IR = 10μA 40 V R everse voltage leakage current IR V R =30V 200 nA Forw ard voltage V F IF=1mA I F =40mA 380 mV Diode capacitance C D V R =0,f=1MHz 5 pF R everse Recovery tim e tr r Irr=1mA, IR =IF=10mA R L =100Ω 5 nS BAS40/ -04/-05/-06 SOT -23
Page:P2-P2 Plastic-EncapsulateDiodes GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. BAS40/ -04/-05/-06 Typical Characteristics