BAS40 TEL | Alldatasheet
Document overview
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Technical content
1.9 0.95 0.95 1.0 2. 4 1. 3 0.4 2.9 B A S 4 0 S E R I E S SCHOTTKY DIODE
FEATURES
P D: 2 0 0 m W ( T a m b = 2 5℃) Forward Current I F: 2 0 0 m A Reverse Voltage V R: 4 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ BAS40 Marking:43 BAS40-04 Marking:44 BAS40-05 Marking:45 BAS40-06 Marking:46 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) IR= 100µA 40 V Reverse voltage leakage current IR V R=30V 100 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD V R=0V, f=1MHz 5 pF Reverse recovery time t r r IF =10mA through IR=10mA to I R=1mA 5 nS U n i t : m m SOT-23