BAS20W YEASHIN | Alldatasheet
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Technical content
http://www.yeashin.com 1 REV.02 20120305 BAS19W/20W/21W SOT-323 Plastic-Encapsulate DIODE SWITCHING DIODE SOT323 Unit:inch(mm) Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP
FEATURES
P D : 200 m W (Tamb=25℃) Collector current I F : 200 m A Collector-base voltage V R : 19W: 120 V; 20W: 150V ; 21W: 200V Operating and storage junction temperature range T J , T stg : -55℃ to +150℃ ‧ High temperature soldering : 260 O C / 10 seconds at terminals ‧ Pb free product at available : 99% Sn above meet RoHS environment substance directive request ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT BAS19W Reverse breakdo wn v oltage BA S20W BAS21W V (BR) R I R = 100µA 100 150 200 V BAS19W Reverse v oltage leakage current BA S20W BAS21W I R 100V V R =150V 200V 0.1 µA Forward voltage V F I F =100mA I F =200mA 1000 1250 mV Diode capacitance C D V R =0V, f=1MHz 5 pF Reveres recovery time t rr I F R =30mA I rr =0.1 I R 50 nS H
http://www.yeashin.com 2 REV.02 20120305 DEVICE CHARACTERISTICS BAS19W/20W/21W 100 1000 01 . 0 2 . 0 1.0 0.1 0.01 5.0 24 6 8 T= 2 5 C J O 200 300 400 100 50 100 150 200 P POWER DISSIPATION (mW) D DIODE CAPACITANCE, pF AMBIENT TEMPERATURE( C) O FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS FORWARD CURRENT, mA T , JUNCTION TEMPERATURE, C J O I , LEAKAGE CURRENT, uA R 0.01 0.1 1.0 100 100 200 Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE FIG. 1-TYPICAL FORWARD CHARACTERISTIC FIG. 4 POWER DERATING CURVEFIG. 3 TYPICAL JUNCTION CAPACITANCE