BAP64-05W HTSEMI | Alldatasheet
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FEATURES
z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z Low series inductance z For applications up to 3 GHz z RF attenuators and switches Marking: 5W Maximum Ratings @T A =25℃ Parameter Symbol Limits Unit Continuous reverse voltage V R 175 V Continuous Forward Current I F 100 mA Power Dissipation P D 2 0 0 m W Thermal Resistance Junction to Ambient R θJA 625 ℃/W Junction temperature T j 150 ℃ Storage temperature T STG -65~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Reverse voltage leakage current I R V R =175V V R =20V µA Forward voltage V F I F =50mA 1.1 V Diode capacitance C d V R =0, f=1MHz V R =1V, f=1MHz V R =20V, f=1MHz 0.52 0.37 0.23 0.35 pF Diode forward resistance r D I F =0.5mA, f=100MHz;note1 I F =1mA, f=100MHz ;note1 I F =10mA, f=100MHz;note1 I F =100mA, f=100MHz;note1 0.7 3.8 1.35 Ω Charge carrier life time τ L when switched from I F = 10 mA to I R = 6 mA; R L 100 Ω; measured at I R =3mA 1.55 μS Series inductance L S IF=100mA, f=100MHz 1.4 nH SOT-323 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. BAP64-05W www.htsemi.comsemiconductor JinYu
www.htsemi.comsemiconductor JinYu BAP64-05W